ATS-1 and ATS-2 Crystals Hermetically sealed AT-st.
ME15N10-G - N-Channel 100-V (D-S) MOSFET
N-Channel 100-V (D-S) MOSFET GENERAL DESCRIPTION ME15N10/ME15N10-G FEATURES ● RDS(ON)≦100mΩ@VGS=10V ● Super high density cell design for extremely lo.F16C20C - 16.0 Ampere Heatsink Common Anode Fast Recovery Rectifier Diode
F16C20A thru F16C60A ® F16C20A thru F16C60A Pb Free Plating Product Pb 16.0 Ampere Heatsink Common Anode Fast Recovery Rectifier Diode Feature Fa.U1520 - 15.0 Ampere Heatsink Single Ultra Fast Recovery Rectifier Diodes
U1520 thru U1560 ® Pb Free Plating Product U1520 thru U1560 Pb 15.0 Ampere Heatsink Single Ultra Fast Recovery Rectifier Diodes Features Latest .ME8117 - P-Channel MOSFET
P-Channel 30V (D-S) MOSFET GENERAL DESCRIPTION The ME8117 is the P-Channel logic enhancement mode power field effect transistors are produced using hi.AN363N - FM Stereo Multiplex Demodulator Circuit
www.DataSheet4U.com www.DataSheet4U.com www.DataSheet4U.com www.DataSheet4U.com .ME80N75T - N-Channel MOSFET
N- Channel 75-V (D-S) MOSFET ME80N75T / ME80N75T-G GENERAL DESCRIPTION The ME80N75T is the N-Channel logic enhancement mode power field effect trans.FEP16GT - 16 Ampere Heatsink Common Cathode Fast Recovery Half Bridge Rectifiers
FEP16DT thru FEP16JT ® FEP16DT/FEP16GT/FEP16JT Pb Free Plating Product Pb 16 Ampere Heatsink Common Cathode Fast Recovery Half Bridge Rectifiers .H10425 - (H10425 / H10426) Photosensor Modules
PHOTOSENSOR MODULES H10425/H10426 OVER VIEW The H10425 is a photosensor module that integrates a 25-mm (1 ) diameter head-on photomultiplier tube wit.H10426 - (H10425 / H10426) Photosensor Modules
PHOTOSENSOR MODULES H10425/H10426 OVER VIEW The H10425 is a photosensor module that integrates a 25-mm (1 ) diameter head-on photomultiplier tube wit.ME7835 - P-Channel MOSFET
P-Channel Enhancement Mode Mosfet GENERAL DESCRIPTION The ME7835 P-Channel logic enhancement mode power field effect transistors are produced using hi.ME7809 - P-Channel MOSFET
P-Channel 30-V(D-S) MOSFET GENERAL DESCRIPTION The ME7809 is the P-Channel logic enhancement mode power field effect transistors are produced using hi.ME80N08AH-G - N-Channel MOSFET
80V N-Channel Enhancement Mode ME80N08AH/ME80N08AH-G GENERAL DESCRIPTION The ME80N08AH is the N-Channel logic enhancement mode power field effect tr.F6584-01 - WIDE DYNAMIC RANGE MICROCHANNEL PLATES
WIDE DYNAMIC RANGE MICROCHANNEL PLATES F6584 SERIES 20 µA Output Current is Available * The F6584 series is a wide dynamic range MCP that offers more.MN152811 - Electronic Component
w w a D . w S a t e e h U 4 t m o .c w w w .D t a S a e h U 4 t e m o .c w w w .D at h S a t e e 4U . m o c .AN5900 - Switching Regulator Controller
w w a D . w S a t e e h U 4 t m o .c w w w .D t a S a e h t e U 4 .c m o w w w .D a t a e h S 4 t e U . m o c .E10679-50 - D TYPE SOCKET ASSEMBLIES
D TYPE SOCKET ASSEMBLIES E10679, E10679-50 The E10679 and E10679-50 are D-type socket assemblies for the R9880U series metal package photomultiplier .ME70N03A - 25V N-Channel Enhancement Mode MOSFET
25V N-Channel Enhancement Mode MOSFET VDS=25V RDS(ON), Vgs@10V,Ids@45A = 6m RDS(ON), Vgs@4.5V,Ids@30A =9m FEATURES Advanced trench process technology .ME80N08 - N-Channel 80-V (D-S) MOSFET
N- Channel 80-V (D-S) MOSFET ME80N08/ME80N08-G GENERAL DESCRIPTION The ME80N08 is the N-Channel logic enhancement mode power field effect transistor.