Description
N-Channel 100-V (D-S) MOSFET GENERAL .
ME15N10/ME15N10-G
FEATURES.
RDS(ON)≦100mΩ@VGS=10V.
Super high density cell design for extremely low RDS(ON).
Exceptional on-resistance.
Features
* RDS(ON)≦100mΩ@VGS=10V
* Super high density cell design for extremely low RDS(ON)
* Exceptional on-resistance and maximum DC current capability
The ME15N10 is the N-Channel logic enhancement mode power field effect transistors, using high cell density, DMOS trench technology. This high
Applications
* Power Management in Note book
* DC/DC Converter
* Load Switch
* LCD Display inverter
PIN
CONFIGURATION
(TO-252-3L) Top View
e Ordering Information: ME15N10 (Pb-free)
ME15N10-G (Green product-Halogen free)
Absolute Maximum Ratings (TA=25℃ Unless Otherwise Noted)
Parameter
Drain-