ME15N10-G, ME15N10 - N-Channel 100-V (D-S) MOSFET

Matsuki

Datasheet Details

Part number	ME15N10-G, ME15N10
Manufacturer	Matsuki
File Size	0.99 MB
Description	N-Channel 100-V (D-S) MOSFET
Datasheet	ME15N10-Matsuki.pdf
Note	This datasheet PDF includes multiple part numbers: ME15N10-G, ME15N10. Please refer to the document for exact specifications by model.

ME15N10/ME15N10-G

RDS(ON)≦100mΩ@VGS=10V.
Super high density cell design for extremely low RDS(ON).
Exceptional on-resistance and maximum DC current capability The ME15N10 is the N-Channel logic enhancement mode power field effect transistors, using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on state resistance. These devices are particularly suited for low voltage.

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Published: Apr 4, 2014 |