ME15N25-G
Matsuki
1.08MB
N-channel 250v (d-s) mosfet. The ME15N25 is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench
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ME15N25 - N-Channel 250V (D-S) MOSFET
(Matsuki)
ME15N25/ME15N25-G
N- Channel 250V (D-S) MOSFET
GENERAL DESCRIPTION
The ME15N25 is the N-Channel logic enhancement mode power field effect transistor.
ME15N25F - N-Channel 250V (D-S) MOSFET
(Matsuki)
N-Channel 250-V (D-S) MOSFET GENERAL DESCRIPTION
The ME15N25F is the N-Channel logic enhancement mode power field effect transistors, using high cell .
ME15N25F-G - N-Channel 250V (D-S) MOSFET
(Matsuki)
N-Channel 250-V (D-S) MOSFET GENERAL DESCRIPTION
The ME15N25F is the N-Channel logic enhancement mode power field effect transistors, using high cell .
ME15N10 - N-Channel 100-V (D-S) MOSFET
(Matsuki)
N-Channel 100-V (D-S) MOSFET
GENERAL DESCRIPTION
ME15N10/ME15N10-G
FEATURES
● RDS(ON)≦100mΩ@VGS=10V ● Super high density cell design for extremely lo.
ME15N10 - N-Channel MOSFET
(VBsemi)
ME15N10-VB
ME15N10-VB Datasheet
N-Channel 100 V (D-S) MOSFET
.VBsemi.
PRODUCT SUMMARY
VDS (V) 100
RDS(on) () 0.114 at VGS = 10 V
ID (A) 1.
ME15N10-G - N-Channel 100-V (D-S) MOSFET
(Matsuki)
N-Channel 100-V (D-S) MOSFET
GENERAL DESCRIPTION
ME15N10/ME15N10-G
FEATURES
● RDS(ON)≦100mΩ@VGS=10V ● Super high density cell design for extremely lo.
ME1502 - 5V USB High-Side Adjustable Door Limit Current Load Switch
(ChipSourceTek)
ME1502
70mΩ, 5V USB
ME15025V
70mΩ
USB。、
、、,、
:±15%
,
。
,。
USB/
k USB e ,
eT
5-pin SOT23-5
urc VIN5V.
ME100N03T - N-Channel MOSFET
(Matsuki)
ME100N03T /ME100N03T-G
N- Channel 30V (D-S) MOSFET
GENERAL DESCRIPTION
The ME100N03T-G is the N-Channel logic enhancement mode power field effect tr.
ME100N03T-G - N-Channel MOSFET
(Matsuki)
ME100N03T /ME100N03T-G
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GENERAL DESCRIPTION
The ME100N03T-G is the N-Channel logic enhancement mode power field effect tr.
ME100N15T-G - N-Channel MOSFET
(Matsuki)
N-Channel 150-V (D-S) MOSFET
GENERAL DESCRIPTION
The ME100N15T-G is the N-Channel logic enhancement mode power field effect transistors are produced u.