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ME15N25 - N-Channel 250V (D-S) MOSFET

Description

The ME15N25 is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology.

This high density process is especially tailored to minimize on-state resistance.

These devices are particularly suited for low voltage application.

Features

  • RDS(ON)≦265mΩ@VGS=10V.
  • Super high density cell design for extremely low RDS(ON).
  • Exceptional on-resistance and maximum DC current capability.

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Datasheet preview – ME15N25

Datasheet Details

Part number ME15N25
Manufacturer Matsuki
File Size 1.08 MB
Description N-Channel 250V (D-S) MOSFET
Datasheet download datasheet ME15N25 Datasheet
Additional preview pages of the ME15N25 datasheet.

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Full PDF Text Transcription

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ME15N25/ME15N25-G N- Channel 250V (D-S) MOSFET GENERAL DESCRIPTION The ME15N25 is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application.
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