ME15N10 - N-Channel 100-V (D-S) MOSFET

Matsuki

Datasheet Details

ME15N10/ME15N10-G

RDS(ON)≦100mΩ@VGS=10V.
Super high density cell design for extremely low RDS(ON).
Exceptional on-resistance and maximum DC current capability The ME15N10 is the N-Channel logic enhancement mode power field effect transistors, using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on state resistance. These devices are particularly suited for low voltage.

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Published: Apr 4, 2014 |