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ME08N20-G

N-Channel MOSFET

ME08N20-G Features

* RDS(ON)≦0.4Ω@VGS=10V

* Super high density cell design for extremely low RDS(ON)

* Exceptional on-resistance and maximum DC current capability APPLICATIONS

* Po wer Management

* DC/DC Converter

* LCD TV & Monitor Display inverter

* CCFL inverter

* Secon dary Synchro

ME08N20-G General Description

The ME08N20 is the N-C hannel lo gic e nhancement mo de p ower field effect transistors ar e pr oduced using high cel l de nsity DMOS trench technology. This high density process is especi ally tailored to minimize on-state resist ance. These dev ices are p articularly su ited for lo w volt age appl.

ME08N20-G Datasheet (622.82 KB)

Preview of ME08N20-G PDF

Datasheet Details

Part number:

ME08N20-G

Manufacturer:

Matsuki

File Size:

622.82 KB

Description:

N-channel mosfet.

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TAGS

ME08N20-G N-Channel MOSFET Matsuki

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