ME08N20 Datasheet (Matsuki) - N-Channel MOSFET

ME08N20, N-Channel MOSFET

The ME08N20 is the N-C hannel lo gic e nhancement mo de p ower field effect transistors ar e pr oduced using high cel l de nsity DMOS trench technology.

This high density process is especi ally tailored to minimize on-state resist ance.

These dev ices are p articularly su ited for lo w volt age appl

ME08N20 Features

* RDS(ON)≦0.4Ω@VGS=10V

* Super high density cell design for extremely low RDS(ON)

* Exceptional on-resistance and maximum DC current capability APPLICATIONS

* Po wer Management

* DC/DC Converter

* LCD TV & Monitor Display inverter

* CCFL inverter

* Secon dary Synchro