ME06N10-G, ME06N10 Datasheet - Matsuki

ME06N10-G N-Channel MOSFET

The ME25N06 is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as.

ME06N10-G Features

* RDS(ON)≦200mΩ@VGS=10V

* RDS(ON)≦260mΩ@VGS=4.5V

* Super high density cell design for extremely low RDS(ON)

* Exceptional on-resistance and maximum DC current capability APPLICATIONS

* Power Management in Note book

* DC/DC Converter

* Load Switch

* LCD Display inverte

ME06N10-Matsuki.pdf

ME06N10-G Datasheet Preview — This datasheet PDF includes multiple part numbers: ME06N10-G, ME06N10. Please refer to the document for exact specifications by model.

Datasheet Details

Part number:

ME06N10-G, ME06N10

Manufacturer:

Matsuki

File Size:

858.89 KB

Description:

N-channel mosfet.

Note:

This datasheet PDF includes multiple part numbers: ME06N10-G, ME06N10.
Please refer to the document for exact specifications by model.

📁 Related Datasheet

ME06N10 N-Channel MOSFET (Matsuki)

ME01 1cell Li-ion/Li-polymer battery protection (MITSUMI)

ME030-350 Closed ends Header (DECA)

ME030-508 Pluggable terminal blocks (Lumberg)

ME04N25 N-Channel MOSFET (Matsuki)

ME04N25-G N-Channel MOSFET (Matsuki)

ME07N25 N-Channel MOSFET (Matsuki)

ME07N25-G N-Channel MOSFET (Matsuki)

TAGS

ME06N10-G ME06N10 N-Channel MOSFET Matsuki

ME06N10-G Distributor