ME06N10-G, ME06N10 N-Channel MOSFET

Matsuki

Description

N-Channel 100-V (D-S) MOSFET ME06N10/ME06N10-G GENERAL .
The ME25N06 is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology.

📥 Download Datasheet

ME06N10-G Datasheet Preview — This datasheet PDF includes multiple part numbers: ME06N10-G, ME06N10. Please refer to the document for exact specifications by model.

Datasheet Specifications

Part number: ME06N10-G, ME06N10
Manufacturer: Matsuki
File Size: 858.89 KB
Datasheet: ME06N10-Matsuki.pdf
Description: N-Channel MOSFET
Note: This datasheet PDF includes multiple part numbers: ME06N10-G, ME06N10.
Please refer to the document for exact specifications by model.

Features

* RDS(ON)≦200mΩ@VGS=10V
* RDS(ON)≦260mΩ@VGS=4.5V
* Super high density cell design for extremely low RDS(ON)

Applications

* Power Management in Note book
* DC/DC Converter
* Load Switch
* LCD Display inverter PIN CONFIGURATION (TO-252-3L) Top View Ordering Information: ME06N10 (Pb-free) ME06N10-G (Green product-Halogen free) Absolute Maximum Ratings (TC=25℃ Unless Otherwise Noted) Parameter Symbol

ME06N10-G Distributors

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ME06N10 N-Channel MOSFET Matsuki

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