ME06N10-G Datasheet, Mosfet, Matsuki

ME06N10-G Features

• Mosfet
• RDS(ON)≦200mΩ@VGS=10V
• RDS(ON)≦260mΩ@VGS=4.5V
• Super high density cell design for extremely low RDS(ON)
• Exceptional on-resistance and maximum DC cu

PDF File Details

Part number:

ME06N10-G

Manufacturer:

Matsuki

File Size:

858.89kb

Download:

📄 Datasheet

Description:

N-channel mosfet. The ME25N06 is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench

ME06N10-G Application

• Applications
• Power Management in Note book
• DC/DC Converter
• Load Switch
• LCD Display inverter PIN CONFIGURATI

TAGS

ME06N10-G

Matsuki

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