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ME06N10 - N-Channel MOSFET

Matsuki

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Datasheet Details

Part number: ME06N10
Manufacturer: Matsuki
File Size: 858.89 KB
Datasheet: ME06N10-Matsuki.pdf
Description: N-Channel MOSFET

ME06N10 Product details

Description

The ME25N06 is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology.

Features

RDS(ON)≦200mΩ@VGS=10V.
RDS(ON)≦260mΩ@VGS=4.5V.
Super high density cell design for extremely low RDS(ON).
Exceptional on-resistance and maximum DC current capability.

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