ME04N25-G, ME04N25 Datasheet - Matsuki

ME04N25-G N-Channel MOSFET

The ME04N25 is the N-Channel logic enhancement mode power field effect transistors, using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on state resistance. These devices are particularly suited for low voltage application such as cellular ph.

ME04N25-G Features

* RDS(ON)≦1.8Ω@VGS=10V

* RDS(ON)≦2.0Ω@VGS=5V

* Super high density cell design for extremely low RDS(ON)

* Exceptional on-resistance and maximum DC current capability APPLICATIONS

* Power Management in Note book

* DC/DC Converter

* Load Switch

* LCD Display inverter P

ME04N25-Matsuki.pdf

ME04N25-G Datasheet Preview — This datasheet PDF includes multiple part numbers: ME04N25-G, ME04N25. Please refer to the document for exact specifications by model.

Datasheet Details

Part number:

ME04N25-G, ME04N25

Manufacturer:

Matsuki

File Size:

480.44 KB

Description:

N-channel mosfet.

Note:

This datasheet PDF includes multiple part numbers: ME04N25-G, ME04N25.
Please refer to the document for exact specifications by model.

ME04N25-G Distributor

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ME04N25-G ME04N25 N-Channel MOSFET Matsuki