Advanced Power Datasheet | Specifications & PDF Download

PRELIMINARY VERSION nly R820T O High Performance Low Power Advanced Digital TV Silicon Tuner Datasheet orSuite 808, Building 53, No.195, Sec.4, Chung

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Advanced Power MOSFET FEATURES Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extende

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RU6888R N-Channel Advanced Power MOSFET MOSFET Features • 68V/88A, RDS (ON) =6mΩ (Typ.) @ VGS=10V • Ultra Low On-Resistance • Exceptional dv/dt capab

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Features  N-Channel  Enhancement mode  Very low on-resistance RDS(on) @ VGS=4.5 V  Fast Switching  Pb-free lead plating; RoHS compliant VSD160N1

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Advanced Analog Technology, Inc. November 2012 AAT1176B Product information presented is for internal use within AAT Inc. only. Details are subject

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VHB100-12 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI VHB100-12 is Designed for PACKAGE STYLE .500 6L FLG C A 2x ØN FULL R D FEATURES: • •

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Features  N-Channel，5V Logic Level Control  Enhancement mode  Fast Switching  Very low on-resistance RDS(on) @ VGS=4.5 V  100% Avalanche test  P

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Features  N-Channel，5V Logic Level Control  Enhancement mode  Fast Switching  Very low on-resistance RDS(on) @ VGS=4.5 V  100% Avalanche test  P

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Advanced Analog Technology, Inc. September 2016 AAT1267B Product information presented is for internal use within AAT Inc. only. Details are subjec

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BAM80 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI BAM80 is Designed for VHF AM power amplifier Applications in the range of 100 to 150 MHz.

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AP85T03GH/J RoHS-compliant Product Advanced Power Electronics Corp. ▼ Low Gate Charge www.DataSheet4U.com N-CHANNEL ENHANCEMENT MODE POWER MOSFET D

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Features  Enhancement mode  Low on-resistance RDS(on) @ VGS=4.5 V  VitoMOS® Ⅱ Technology  Fast Switching and High efficiency  100% Avalanche Test

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VHB25-28F NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI VHB25-28F is Designed for PACKAGE STYLE .380 4L FLG .112 x 45° A Ø.125 NOM. FULL R J

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RU7588R N-Channel Advanced Power MOSFET Features • 80V/80A, RDS (ON) =7mΩ(Typ.) @ VGS=10V • Ultra Low On-Resistance • Exceptional dv/dt capability •

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RU7088 N-Channel Advanced Power MOSFET MOSFET Features • 70V/80A, RDS (ON) =6.5mΩ (Type) VGS=10V IDS=40A • Ultra Low On-Resistance • Exceptional dv/d

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Features  N-Channel  Enhancement mode  Very low on-resistance RDS(on) @ VGS=4.5 V  Fast Switching  High conversion efficiency  Pb-free lead plat

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Features  N-Channel，5V Logic Level Control  Enhancement mode  Very low on-resistance RDS(on) @ VGS=4.5 V  Fast Switching  100% Avalanche Tested 

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Features  P-Channel，-5V Logic Level Control  Low on-resistance RDS(on) @ VGS=-4.5 V  Fast Switching  Enhancement mode  Pb-free lead plating; RoHS

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Features  P-Channel，-5V Logic Level Control  Low on-resistance RDS(on) @ VGS=-4.5 V  Fast Switching and High efficiency  Enhancement mode  Pb-fre

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® 600V 30A APT30DQ60B APT30DQ60S www.DataSheet4U.com APT30DQ60BG* APT30DQ60SG* *G Denotes RoHS Compliant, Pb Free Terminal Finish. ULTRAFAST SOFT RE

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