VSM002NE4MS-G Datasheet | Vanguard Semiconductor

Features - Enhancement mode - Low on-resistance RDS(on) @ VGS=4.5 V - Vito MOS® Ⅱ Technology - Fast Switching and High efficiency - 100% Avalanche Tested - Pb-free lead plating; Ro HS pliant 45V/200A N-Channel Advanced Power MOSFET V DS 45 V R @ DS(on),TYP VGS=10 V 1.8 mΩ R @ DS(on),TYP VGS=4.5 V 2.7 mΩ 200 A TO-263 Part ID VSM002NE4MS-G Package Type TO-263 Marking 002NE4M Tape and reel information 1000pcs/Reel Maximum ratings, at T A=25 °C, unless otherwise specified Symbol Parameter V(BR)DSS Drain-Source breakdown voltage Gate-Source voltage Diode continuous forward current Continuous drain current @VGS=10V Pulse drain current tested ① IDSM Continuous drain current @VGS=10V Avalanche energy, single pulsed ② Maximum power...