VSM007P06MS
VSM007P06MS is P-Channel Advanced Power MOSFET manufactured by Vanguard Semiconductor.
Features
- P-Channel,-5V Logic Level Control
- Very low on-resistance RDS(on) @ VGS=-4.5 V
- Fast Switching
- Enhancement mode
- 100% Avalanche Tested
- Pb-free lead plating; Ro HS pliant
-60V/-80A P-Channel Advanced Power MOSFET
V DS R @DS(on),TYP VGS=-10 V R @DS(on),TYP VGS=-4.5V ID
-60 V 8.0 mΩ 10.0 mΩ -80 A
TO-263
Part ID
Package Type
TO-263
Marking Tape and reel information
007P06M
800pcs/Reel
Maximum ratings, at T j=25 °C, unless otherwise specified
Symbol
Parameter mon Ratings (TC=25°C Unless Otherwise Noted)
VGS Gate-Source Voltage
V(BR)DSS
TJ TSTG IS
Drain-Source Breakdown Voltage Maximum Junction Temperature Storage Temperature Range① Diode Continuous Forward Current
Mounted on Large Heat Sink
ID Continuous Drain current @VGS=-10V
IDM Pulse Drain Current Tested ② PD Maximum Power Dissipation RJC Thermal Resistance-Junction to Case RJA Thermal Resistance Junction-Ambient
Drain-Source Avalanche...