• Part: VSM007P06MS
  • Description: P-Channel Advanced Power MOSFET
  • Category: MOSFET
  • Manufacturer: Vanguard Semiconductor
  • Size: 334.41 KB
Download VSM007P06MS Datasheet PDF
Vanguard Semiconductor
VSM007P06MS
VSM007P06MS is P-Channel Advanced Power MOSFET manufactured by Vanguard Semiconductor.
Features - P-Channel,-5V Logic Level Control - Very low on-resistance RDS(on) @ VGS=-4.5 V - Fast Switching - Enhancement mode - 100% Avalanche Tested - Pb-free lead plating; Ro HS pliant -60V/-80A P-Channel Advanced Power MOSFET V DS R @DS(on),TYP VGS=-10 V R @DS(on),TYP VGS=-4.5V ID -60 V 8.0 mΩ 10.0 mΩ -80 A TO-263 Part ID Package Type TO-263 Marking Tape and reel information 007P06M 800pcs/Reel Maximum ratings, at T j=25 °C, unless otherwise specified Symbol Parameter mon Ratings (TC=25°C Unless Otherwise Noted) VGS Gate-Source Voltage V(BR)DSS TJ TSTG IS Drain-Source Breakdown Voltage Maximum Junction Temperature Storage Temperature Range① Diode Continuous Forward Current Mounted on Large Heat Sink ID Continuous Drain current @VGS=-10V IDM Pulse Drain Current Tested ② PD Maximum Power Dissipation RJC Thermal Resistance-Junction to Case RJA Thermal Resistance Junction-Ambient Drain-Source Avalanche...