Datasheet4U Logo Datasheet4U.com

VSM007P06MS - P-Channel Advanced Power MOSFET

Datasheet Summary

Features

  • P-Channel，-5V Logic Level Control.
  • Very low on-resistance RDS(on) @ VGS=-4.5 V.
  • Fast Switching.
  • Enhancement mode.
  • 100% Avalanche Tested.
  • Pb-free lead plating; RoHS compliant VSM007P06MS -60V/-80A P-Channel Advanced Power MOSFET V DS R @DS(on),TYP VGS=-10 V R @DS(on),TYP VGS=-4.5V ID -60 V 8.0 mΩ 10.0 mΩ -80 A TO-263 Part ID Package Type VSM007P06MS TO-263 Marking Tape and reel information 007P06M 800pcs/Reel Maximum ratings, at T j=25 °C, unless otherwi.

📥 Download Datasheet

Datasheet preview – VSM007P06MS

Datasheet Details

Part number VSM007P06MS
Manufacturer Vanguard Semiconductor
File Size 334.41 KB
Description P-Channel Advanced Power MOSFET
Datasheet download datasheet VSM007P06MS Datasheet
Additional preview pages of the VSM007P06MS datasheet.

📁 Similar Datasheet

  • VSM0805 - Bulk Metal Foil Technology Discrete Surface Mount Chip Resistors (Vishay Siliconix)
  • VSM120N04-T1 - These N-Channel enhancement mode power field effect transistors (VSEEI)
  • VSM120N04-T2 - These N-Channel enhancement mode power field effect transistors (VSEEI)
  • VSM50N15 - MOSFET (VSEEI)
  • VSMA1085250 - High Power Infrared Emitting Diode (Vishay)
  • VSMA1085600X02 - High Power Infrared Emitting Diode (Vishay)
  • VSMA1094250X02 - High Power Infrared Emitting Diode (Vishay)
  • VSMB10940 - High Speed Infrared Emitting Diode (Vishay)
  • VSMB14940 - High Speed Infrared Emitting Diodes (Vishay)
  • VSMB2000X01 - High Speed Infrared Emitting Diodes (Vishay)
Other Datasheets by Vanguard Semiconductor

Full PDF Text Transcription

Click to expand full text
Features  P-Channel，-5V Logic Level Control  Very low on-resistance RDS(on) @ VGS=-4.5 V  Fast Switching  Enhancement mode  100% Avalanche Tested  Pb-free lead plating; RoHS compliant VSM007P06MS -60V/-80A P-Channel Advanced Power MOSFET V DS R @DS(on),TYP VGS=-10 V R @DS(on),TYP VGS=-4.5V ID -60 V 8.0 mΩ 10.
Published: |