VSM007N07MS Datasheet | Vanguard Semiconductor

Features - N-Channel，5V Logic Level Control - Enhancement mode - Low on-resistance RDS(on) @ VGS=4.5 V - Vito MOS® Technology - 100% Avalanche Tested - Pb-free lead plating; Ro HS pliant 80V/80A N-Channel Advanced Power MOSFET V DS 80 V R @DS(on),TYP VGS=10 V R @DS(on),TYP VGS=4.5 V 8 mΩ 9 mΩ I D 80 A TO-263 Part ID VSM007N07MS Package Type TO-263 Marking 007N07M Tape and reel information 1000pcs/Reel Maximum ratings, at T A=25 °C, unless otherwise specified Symbol Parameter V(BR)DSS Drain-Source breakdown voltage Gate-Source voltage IS Diode continuous forward current ID Continuous drain current @VGS=10V IDM Pulse drain current tested ① IDSM Continuous drain current @VGS=10V Avalanche energy, single pulsed ② PDSM Maximum power dissipation Maximum power dissipation ③ TSTG , TJ Storage and Junction Temperature Range Thermal Characteristics TC =25°C TC =25°C TC =100°C TC =25°C TA=25°C TA=70°C TC...