VSM005NE8HS-G Datasheet | Vanguard Semiconductor

Features - Enhancement mode - Very low on-resistance - Vito MOS® Ⅱ Technology - 100% Avalanche Tested 85V/124A N-Channel Advanced Power MOSFET V DS R @ DS(on),TYP VGS=10 V ID 85 V 4.9 mΩ 124 A TO-263 Part ID VSM005NE8HS-G Package Type TO-263 Marking 005NE8H Packing 1000pcs/Reel Maximum ratings, at T A=25 °C, unless otherwise specified Symbol Parameter V(BR)DSS Drain-Source breakdown voltage Gate-Source voltage IS ID IDM IDSM Diode continuous forward current Continuous drain current @VGS=10V Pulse drain current tested ① Continuous drain current @VGS=10V TC =25°C TC =25°C TC =100°C TC =25°C TA=25°C TA=70°C Avalanche energy, single pulsed ② PD PDSM Maximum power dissipation Maximum power dissipation ③ TC =25°C TA=25°C TSTG,TJ Storage and Junction Temperature Range Thermal Characteristics Symbol Parameter Typical RθJC Thermal Resistance, Junction-to-Case...