Axial Datasheet | Pinout, Features, Price Comparison & PDF

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A733 PNP Epitaxial Silicon Transistor LOW FREQUENCY AMPLIFIER Collector-Emitter Voltage: VCEO=-50V Collector Dissipation: PC(max)=250mW Absolute Max

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PN2222 PN2222 General Purpose Transistor NPN Epitaxial Silicon Transistor 1 TO-92 1. Emitter 2. Base 3. Collector Absolute Maximum Ratings Ta=25

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1N4001 - 1N4007 AXIAL LEADED RECTIFIER DIODES VOLTAGE RANGE: 50 - 1000V CURRENT: 1.0 A Features Diffused Junction Low Forward Voltage Drop High

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1N4001 - 1N4007 AXIAL LEADED RECTIFIER DIODES VOLTAGE RANGE: 50 - 1000V CURRENT: 1.0 A Features Diffused Junction Low Forward Voltage Drop High

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UTC D313 NPN EPITAXIAL PLANAR TRANSISTOR NPN EPITAXIAL PLANAR TRANSISTOR DESCRIPTION The UTC D313 is designed for use in general purpose amplifier a

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SEMICONDUCTOR TECHNICAL DATA HIGH CURRENT SWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION. FEATURES With Built-in Bias Resisto

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Silicon Epitaxial Planar Transistor FEATURES z Collector Current.(IC= 1.5A） z Complementary To SS8550. Pb Lead-free z Collector dissipation:PC=300m

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2SC5200/FJL4315 NPN Epitaxial Silicon Transistor Applications • High-Fidelity Audio Output Amplifier • General Purpose Power Amplifier Features • High

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BC846 BC850 BC846 BC850 SMD General Purpose NPN Transistors SMD Universal-NPN-Transistoren IC = 100 mA hFE = 180/290/520 Tjmax = 150°C VCEO

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C2688 NPN Epitaxial Silicon Transistor COLOR TV CHROMA OUTPUT & VIDEO OUTPUT Collector-Emitter Voltage: VCEO=300V Collector Dissipation: PC(max)=10W

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FJNS4202R FJNS4202R Switching Application (Bias Resistor Built In) • Switching circuit, Inverter, Interface circuit, Driver Circuit • Built in bias R

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FJN3305R FJN3305R Switching Application (Bias Resistor Built In) • Switching circuit, Inverter, Interface circuit, Driver Circuit • Built in bias Res

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BC846/847/848/849/850 SWITCHING AND AMPLIFIER APPLICATIONS • Suitable for automatic insertion in thick and thin-film circuits • LOW NOISE: BC849, BC85

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C3198 NPN Epitaxial Silicon Transistor Features Collector-Emitter Voltage: VCEO=50V Collector Dissipation: PC(max)=625mW TO-92 Absolute Maximum Rat

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1N5400 - 1N5408 AXIAL LEADED RECTIFIER DIODES VOLTAGE RANGE: 50 - 1000V CURRENT: 3.0 A Features High Current Capability and Low Forward Voltage Dro

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KSC2073 — NPN Epitaxial Silicon Transistor KSC2073 NPN Epitaxial Silicon Transistor September 2011 Features • TV Vertical Deflection Output • Compl

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PN2222A / 2N2222A PN2222A / 2N2222A NPN General purpose Si-Epitaxial PlanarTransistors Si-Epitaxial Planar-Transistoren für universellen Einsatz V

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