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B1016A Matched Datasheet

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No Part Number Description Manufacture PDF
1 B1016A 2SB1016A

TOSHIBA Transistor Silicon PNP Epitaxial Type 2SB1016A Power Amplifier Applications 2SB1016A Unit: mm • High breakdown voltage: VCEO = −100 V • Low collector-emitter saturation voltage: VCE (s
Toshiba
Toshiba
B1016A pdf






B1016 Similar Datasheet

Part Number Description Manufacture PDF
B1016 2SB1016

TOSHIBA Transistor Silicon PNP Epitaxial Type 2SB1016A Power Amplifier Applications 2SB1016A Unit: mm • High breakdown voltage: VCEO = −100 V • Low collector-emitter saturation voltage: VCE (s
ETC
ETC
B1016 datasheet
B1016A 2SB1016A

TOSHIBA Transistor Silicon PNP Epitaxial Type 2SB1016A Power Amplifier Applications 2SB1016A Unit: mm • High breakdown voltage: VCEO = −100 V • Low collector-emitter saturation voltage: VCE (s
Toshiba
Toshiba
B1016A datasheet


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