B1016A Datasheet - Toshiba

B1016A, 2SB1016A

TOSHIBA Transistor Silicon PNP Epitaxial Type 2SB1016A Power Amplifier Applications 2SB1016A Unit: mm * High breakdown voltage: VCEO = <.

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Datasheet Details

Part number:

B1016A

Manufacturer:

Toshiba ↗

File Size:

249.65 KB

Description:

2SB1016A

Applications

* 2SB1016A Unit: mm
* High breakdown voltage: VCEO =
* 100 V
* Low collector-emitter saturation voltage: VCE (sat) =
* 2.0 V (max)
* Complementary to 2SD1407A Absolute Maximum Ratings (Tc = 25°C) Characteristics Symbol Rating Unit Collector-base voltage V

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