B120 Datasheet | Specifications & PDF Download

Heart Rate, Blood Oxygen Concentration, Pulse Oximetry, Proximity, Light and Color Sensor OB1203 Datasheet Description The Renesas OB1203SD and OB12

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1.0SMBxx(C)A Series Surface Mount Transient Voltage Suppressor Rectifiers Reverse Voltage 5.8 ~ 450 V 1000 Watt Peak Pulse Power Features ● Glass pas

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MBR120ESF, NRVB120ESF Surface Mount Schottky Power Rectifier Plastic SOD−123 Package This device uses the Schottky Barrier principle with a large are

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*RoHS COMPLIANT Features n RoHS compliant* and halogen free** n Surface Mount SMB package n Breakdown Voltage: 6.8 to 550 volts n Peak Pulse Powe

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SIDACtor® Protection Thyristors SLIC Protection Battrax® Series - Single Port Negative - MS-013 Agency Approvals Agency Agency File Number E133083

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12-output DB1200ZL Derivative with Integrated 85Ω Terminations 9ZXL1251 DATASHEET General Description The 9ZXL1251 meets the demanding requirements

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APPLIED POWER SYSTEMS, INC. IAP200B120 SixPac™ 200A / 1200V Full-Bridge IGBT Inverter FEATURES INCLUDE Multi-Function Power Assembly Compact Size – 9

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Ordering number : EN2086C 2SB1204 Bipolar Transistor –50V, –8A, Low VCE(sat), PNP Single TP/TP-FA http://onsemi.com Applications • Relay drivers,

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2:12 DB1200ZL Derivative for PCIe Gen1–4 and UPI 9ZML1232E / 9ZML1252E Datasheet Description The 9ZML1232E / 9ZML1252E are a second generation 2-inp

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http://www.fujielectric.com/products/semiconductor/ 7MBR75VB120-50 IGBT Modules IGBT MODULE (V series) 1200V / 75A / PIM Features Low VCE(sat) Com

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January 2021 PRODUCT FEATURES □ IGBT CHIP(Trench+Field Stop technology) □ Low saturation voltage and positive temperature coefficient □ Fast switching

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Dual Boost Power Module NXH40B120MNQ0SNG Description The NXH40B120MNQ0SNG is a power module containing a dual boost stage. The integrated SiC MOSFETs

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3 Channel Q1 BOOST Module NXH240B120H3Q1PG, NXH240B120H3Q1PG-R, NXH240B120H3Q1SG The NXH240B120H3Q1PG is a case power module containing a three chann

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Si/SiC Hybrid Modules – EliteSiC, Dual Boost, 1200 V, 50 A IGBT + 1200 V, 20 A SiC Diode, Q0 Package NXH100B120H3Q0, NXH100B120H3Q0PG-R The NXH100B120

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Ordering number:ENN2086B PNP/NPN Epitaxial Planar Silicon Transistors 2SB1204/2SD1804 High-Current Switching Applications Applications Æ Relay drive

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HI-SINCERITY MICROELECTRONICS CORP. HLB120A NPN Triple Diffused Planar Type High Voltage Transistors Spec. No. : HE6412 Issued Date : 1998.12.01 Revi

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ReICU DC/DC CONVERTER B****S/D-2W(R2) Series 1000VDC Isolated 2W Single Output SIP/DIP-Package Features RoHS compliant Efficiency up to 83% 1kVDC I

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2SB1202/2SD1802 Bipolar Transistor (–)50 V, (–)3 A, Low VCE(sat) (PNP)NPN Single TP/TP−FA Features • Adoption of FBET and MBIT Processes • Large Cur

Rating: 1 ★ (6 votes)

1.0SMBxx(C)A Series Surface Mount Transient Voltage Suppressor Rectifiers Reverse Voltage 5.8 ~ 450 V 1000 Watt Peak Pulse Power Features ● Glass pas

Rating: 1 ★ (6 votes)

PD- 93817 IRGP20B120UD-E INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • UltraFast Non Punch Through (NPT) Technology

Rating: 1 ★ (6 votes)