2SB1391 Silicon PNP Triple Diffused Application P.
INCHANGE
2SB1391 - PNP Transistor
isc Silicon PNP Darlington Power Transistor DESCRIPTION ·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= -120V(Min) ·High DC Current Gain- : hFE= .
Hitachi Semiconductor
2SB1391 - Silicon PNP Transistor
2SB1391 Silicon PNP Triple Diffused Application Power switching Outline TO-220FM 2 1 1. Base 2. Collector 3. Emitter 12 3 2 kΩ (Typ) 200 Ω (Typ.
SavantIC
2SB1391 - SILICON POWER TRANSISTOR
SavantIC Semiconductor www.DataSheet4U.com Product Specification Silicon PNP Power Transistors 2SB1391 DESCRIPTION ·With TO-220Fa package ·High DC.
Silan Microelectronics
2SB139100MA - LOW IR SCHOTTKY BARRIER DIODE
2SB139100MA 2SB139100MA LOW IR SCHOTTKY BARRIER DIODE CHIPS DESCRIPTION Ø Ø 2SB139100MA is a schottky barrier diode chips Lb Due to special schottky .
Hitachi Semiconductor
B1391 - 2SB1391
2SB1391 Silicon PNP Triple Diffused Application Power switching Outline TO-220FM 123 1. Base 2. Collector 3. Emitter 2 1 2 kΩ (Typ) 200 Ω (Typ) 3.
Panasonic
EKMB1391111K - PIR MOTION SENSOR
2 PIR MOTION SENSORS Pyroelectric infrared motion sensors from Panasonic for optimal usability and reliability Panasonic develops and produces PIR m.
Panasonic
EKMB1391113K - PIR MOTION SENSOR
2 PIR MOTION SENSORS Pyroelectric infrared motion sensors from Panasonic for optimal usability and reliability Panasonic develops and produces PIR m.
Panasonic
EKMB1391112K - PIR MOTION SENSOR
2 PIR MOTION SENSORS Pyroelectric infrared motion sensors from Panasonic for optimal usability and reliability Panasonic develops and produces PIR m.