B1391 Datasheet | Specifications & PDF Download

2SB1391 Silicon PNP Triple Diffused Application Power switching Outline TO-220FM 123 1. Base 2. Collector 3. Emitter 2 1 2 kΩ (Typ) 200 Ω (Typ) 3

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2SB1391 Silicon PNP Triple Diffused Application Power switching Outline TO-220FM 2 1 1. Base 2. Collector 3. Emitter 12 3 2 kΩ (Typ) 200 Ω (Typ

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2 PIR MOTION SENSORS Pyroelectric infrared motion sensors from Panasonic for optimal usability and reliability Panasonic develops and produces PIR m

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SavantIC Semiconductor www.DataSheet4U.com Product Specification Silicon PNP Power Transistors 2SB1391 DESCRIPTION ·With TO-220Fa package ·High DC

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2 PIR MOTION SENSORS Pyroelectric infrared motion sensors from Panasonic for optimal usability and reliability Panasonic develops and produces PIR m

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2 PIR MOTION SENSORS Pyroelectric infrared motion sensors from Panasonic for optimal usability and reliability Panasonic develops and produces PIR m

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isc Silicon PNP Darlington Power Transistor DESCRIPTION ·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= -120V(Min) ·High DC Current Gain- : hFE=

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2SB139100MA 2SB139100MA LOW IR SCHOTTKY BARRIER DIODE CHIPS DESCRIPTION Ø Ø 2SB139100MA is a schottky barrier diode chips Lb Due to special schottky

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