B4060 Datasheet | Specifications & PDF Download

www.DataSheet4U.com SAW Components Data Sheet B4060 SAW Components Low-Loss Filter Data Sheet B4060 1575.4 MHz SMD ceramic package QCC8D Features

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® WON-TOP ELECTRONICS SB4020CT – SB40100CT 40A DUAL SCHOTTKY BARRIER RECTIFIER Pb Features  Schottky Barrier Chip  Guard Ring for Transient Protec

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Aluminum electrolytic capacitors Hybrid polymer aluminum electrolytic capacitors, very high ripple current density – up to 150 °C Series/Type: Date:

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July 1996 NDP4060 / NDB4060 N-Channel Enhancement Mode Field Effect Transistor General Description These N-Channel enhancement mode power field effec

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April 1996 NDP4060L / NDB4060L N-Channel Logic Level Enhancement Mode Field Effect Transistor General Description These logic level N-Channel enhance

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SB 4 0 20 ta PT~SB4060PT ISOLATION SCHOTTKY BARRIER RECTIFIERS e h S U 4 et . m o c DATA SHEET w w VOLTAGE a D . w 20 to 60 Volts CURRENT 4

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SB 4 0 20 ta PT~SB4060PT ISOLATION SCHOTTKY BARRIER RECTIFIERS e h S U 4 et . m o c DATA SHEET w w VOLTAGE a D . w 20 to 60 Volts CURRENT 4

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SB 4 0 20 ta PT~SB4060PT ISOLATION SCHOTTKY BARRIER RECTIFIERS e h S U 4 et . m o c DATA SHEET w w VOLTAGE a D . w 20 to 60 Volts CURRENT 4

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SB 4 0 20 ta PT~SB4060PT ISOLATION SCHOTTKY BARRIER RECTIFIERS e h S U 4 et . m o c DATA SHEET w w VOLTAGE a D . w 20 to 60 Volts CURRENT 4

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www.DataSheet4U.com PD - 97073B IRGB4060DPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • • • • • • • • • • Low V

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® WON-TOP ELECTRONICS SB4020FCT – SB40100FCT 40A DUAL SCHOTTKY BARRIER RECTIFIER Pb Features  Schottky Barrier Chip  Guard Ring for Transient Prot

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CEB4060AL-VB CEB4060AL-VB Datasheet N-Channel 60 V (D-S) MOSFET www.VBsemi.com PRODUCT SUMMARY VDS (V) RDS(on) () 60 0.032 at VGS = 10 V 0.035

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® WON-TOP ELECTRONICS SB4020DC – SB40100DC 40A SURFACE MOUNT DUAL SCHOTTKY BARRIER RECTIFIER Pb Features  Low Forward Voltage  Epitaxial Construct

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CEP4060A/CEB4060A N-Channel Enhancement Mode Field Effect Transistor FEATURES 60V, 17A, RDS(ON) = 85mΩ @VGS = 10V. Super high dense cell design for e

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CEP4060AL/CEB4060AL N-Channel Enhancement Mode Field Effect Transistor FEATURES 60V, 17A,RDS(ON) = 75mΩ @VGS = 10V. RDS(ON) = 90mΩ @VGS = 5.0V. Supe

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