B562 Datasheet | Specifications & PDF Download

2SB562 Silicon PNP Epitaxial Application • Low frequency power amplifier • Complementary pair with 2SD468 Outline RENESAS Package code: PRSS0003DC-A (

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DATA SHEET SURFACE-MOUNT CERAMIC MULTILAYER CAPACITORS General purpose Class 1, NP0 16 V TO 50 V 0.22 pF to 33 nF RoHS compliant & Halogen Free Produ

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isc N-Channel MOSFET Transistor IRFB5620，IIRFB5620 ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤72.5mΩ ·Enhancement mode ·Fast Switching S

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PD - 96174 DIGITAL AUDIO MOSFET Features • Key Parameters Optimized for Class-D Audio Amplifier Applications • Low RDSON for Improved Efficiency • Lo

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High Voltage Ceramic Disc Capacitors SPECIFICATION No: WM-S050104-C01 MENTION ITEM 1. Scope 2. Relative Standards 3. Quality 4. Operating Themperat

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www.DataSheet4U.com Magnetic Transducer Date: 3/6/06 Dimensions: mm (In.) Part Number: 254-MB562 Magnetic Transducer Masking Label 5.50 7.50±.20

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VB562K N- and P-Channel 60V (D-S) MOSFET www.VBsemi.com PRODUCT SUMMARY N-Channel P-Channel VDS (V) 60 - 60 RDS(on) (Ω) 0.700 at VGS = 10 V 0.85

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2SB562 Silicon PNP Epitaxial Application • Low frequency power amplifier • Complementary pair with 2SD468 Outline TO-92MOD 1. Emitter 2. Collector

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HI-SINCERITY MICROELECTRONICS CORP. HSB562 PNP EPITAXIAL PLANAR TRANSISTOR Spec. No. : HE6513 Issued Date : 1993.01.15 Revised Date : 2005.02.14 Page

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UNISONIC TECHNOLOGIES CO., LTD 2SB562 PNP EPITAXIAL SILICON TRANSISTOR LOW FREQUENCY POWER AMPLIFIER  FEATURES * Low frequency power amplifier *

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Choke Coils ■ Examples Type 06D Inductance (µH) 2.2 2.7 3.3 3.9 4.7 5.6 6.8 8.2 10.0 12.0 15.0 18.0 22.0 27.0 33.0 39.0 47.0 56.0 68.0 82.0 100.0 120.

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Choke Coils ■ Examples Type 06D Inductance (µH) 2.2 2.7 3.3 3.9 4.7 5.6 6.8 8.2 10.0 12.0 15.0 18.0 22.0 27.0 33.0 39.0 47.0 56.0 68.0 82.0 100.0 120.

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2SB562 Silicon PNP Epitaxial Application • Low frequency power amplifier • Complementary pair with 2SD468 Outline RENESAS Package code: PRSS0003DC-A (

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