IRFB5620 - N-Channel MOSFET
IRFB5620 Features
* Static drain-source on-resistance: RDS(on) ≤72.5mΩ
* Enhancement mode
* Fast Switching Speed
* 100% avalanche tested
* Minimum Lot-to-Lot variations for robust device performance and reliable operation
* DESCRITION
* 175℃ operating junction temperature and repetitive avalanch
