IRFB5615 Datasheet - INCHANGE

IRFB5615, N-Channel MOSFET

isc N-Channel MOSFET Transistor IRFB5615，IIRFB5615 *

Features

* Static drain-source on-resistance: RDS(on) ≤39mΩ
* Enhancement mode
* Fast Switching Speed
* 100% avalanche tested
* Minimum Lot-to-Lot variations for robust device performance and reliable operation
* DESCRITION
* 175℃ operating junction temperature and high repetitive peak

Applications

* of our products.
ISC products are intended for usage in general electronic equipment.
The products are not designed for use in equipment which require specialized quality and/or reliability, or in equipment which could have applications in hazardous environments, aerospace industry, or medical field

IRFB5615-INCHANGE.pdf