HSB562

PNP EPITAXIAL PLANAR TRANSISTOR

Hi-Sincerity Mocroelectronics

HSB562 General Description

The HSB562 is designed for general purpose low frequency power amplifier applications. Absolute Maximum Ratings TO-92

* Maximum Temperatures Storage Temperature -55 ~ +150 °C Junction Temperature +150 °C Maximum

* Maximum Power Dissipation Total Power Dissipation (TA=25°C) 90.

HSB562 Datasheet (50.75 KB)

HSB562 Datasheet Preview — Preview of HSB562 PDF

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Part number:

HSB562

Manufacturer:

Hi-Sincerity Mocroelectronics

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50.75 KB

Description:

Pnp epitaxial planar transistor.
HI-SINCERITY MICROELECTRONICS CORP. HSB562 PNP EPITAXIAL PLANAR TRANSISTOR Spec. No. : HE6513 Issued Date : 1993.01.15 Revised Date : 2005.02.14 Page.

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HSB562 PNP EPITAXIAL PLANAR TRANSISTOR Hi-Sincerity Mocroelectronics

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HSB562 General Description

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