HSB562, HSB562_Hi - PNP EPITAXIAL PLANAR TRANSISTOR

Hi-Sincerity Mocroelectronics

HSB562 Datasheet Preview — This datasheet PDF includes multiple part numbers: HSB562, HSB562_Hi. Please refer to the document for exact specifications by model.

Datasheet Details

Part number	HSB562, HSB562_Hi
Manufacturer	Hi-Sincerity Mocroelectronics
File Size	50.75 KB
Description	PNP EPITAXIAL PLANAR TRANSISTOR
Datasheet	HSB562_Hi-SincerityMocroelectronics.pdf
Note	This datasheet PDF includes multiple part numbers: HSB562, HSB562_Hi. Please refer to the document for exact specifications by model.

HSB562 Product details

Description

The HSB562 is designed for general purpose low frequency power amplifier applications. Maximum Temperatures Storage Temperature -55 ~ +150 °C Junction Temperature +150 °C Maximum Maximum Power Dissipation Total Power Dissipation (TA=25°C) 900 mW Maximum Voltages and Currents (TA=25°C) VCBO Collector to Base Voltage

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Published: Mar 26, 2005 |