* Low frequency high voltage amplifier
* Complementary pair with HSD1609 Absolute Maximum Ratings (TA=25°C) TO-126ML
* Maximum Temperatures Storage Temperature -50 ~ +150 °C Junction Temperature +150 °C Maximum
* Maximum Power Dissipation Total Power Dissipatio
HSB1109
Hi-Sincerity Mocroelectronics
41.78 KB
Pnp epitaxial planar transistor.
HI-SINCERITY MICROELECTRONICS CORP. HSB1109 PNP EPITAXIAL PLANAR TRANSISTOR Spec. No. : HE6607 Issued Date : 1993.03.15 Revised Date : 2006.02.20 Pag.
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