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HSB1109S, HSB1109S_Hi - PNP EPITAXIAL PLANAR TRANSISTOR

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This datasheet PDF includes multiple part numbers: HSB1109S, HSB1109S_Hi. Please refer to the document for exact specifications by model.
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Datasheet Details

Part number HSB1109S, HSB1109S_Hi
Manufacturer Hi-Sincerity Mocroelectronics
File Size 51.21 KB
Description PNP EPITAXIAL PLANAR TRANSISTOR
Datasheet download datasheet HSB1109S_Hi-SincerityMocroelectronics.pdf
Note This datasheet PDF includes multiple part numbers: HSB1109S, HSB1109S_Hi.
Please refer to the document for exact specifications by model.

HSB1109S Product details

Description

The HSB1109S is designed for low frequency and high voltage amplifier applications complementary pair with HSD1609S. Maximum Temperatures Storage Temperature -50 ~ +150 °C Junction Temperature +150 °C Maximum Maximum Power Dissipation Total Power Dissipation (TA=25°C) 900 mW Maximum Voltages and Currents (TA=25°C) VCBO Collector to Base Voltage

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