Description
HI-SINCERITY MICROELECTRONICS CORP.HSB1109S PNP EPITAXIAL PLANAR TRANSISTOR Spec.No.: HE6514 Issued Date : 1993.03.15 Revised Date : 2005.02.14 Pa.
The HSB1109S is designed for low frequency and high voltage amplifier applications complementary pair with HSD1609S.
Applications
* complementary pair with HSD1609S. Absolute Maximum Ratings
TO-92
* Maximum Temperatures Storage Temperature -50 ~ +150 °C Junction Temperature +150 °C Maximum
* Maximum Power Dissipation Total Power Dissipation (TA=25°C) 900 mW
* Maximum Voltages and Currents (TA=25°C)