HSB649A, HSB649A_Hi - SILICON PNP EPITAXIAL PLANAR TRANSISTOR

Hi-Sincerity Mocroelectronics

HSB649A Datasheet Preview — This datasheet PDF includes multiple part numbers: HSB649A, HSB649A_Hi. Please refer to the document for exact specifications by model.

Datasheet Details

Part number	HSB649A, HSB649A_Hi
Manufacturer	Hi-Sincerity Mocroelectronics
File Size	41.08 KB
Description	SILICON PNP EPITAXIAL PLANAR TRANSISTOR
Datasheet	HSB649A_Hi-SincerityMocroelectronics.pdf
Note	This datasheet PDF includes multiple part numbers: HSB649A, HSB649A_Hi. Please refer to the document for exact specifications by model.

HSB649A Product details

Description

Low frequency power amplifier complementary pair with HSD669A. Maximum Temperatures Storage Temperature -55 ~ +150 °C Junction Temperature +150 °C Maximum Maximum Power Dissipation Total Power Dissipation 1 W Total Power Dissipation (TC=25°C) 20 W Maximum Volt

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Published: Mar 26, 2005 |