HSB649A

SILICON PNP EPITAXIAL PLANAR TRANSISTOR

Hi-Sincerity Mocroelectronics

HSB649A General Description

Low frequency power amplifier complementary pair with HSD669A. Absolute Maximum Ratings (TA=25°C) TO-126ML

* Maximum Temperatures Storage Temperature -55 ~ +150 °C Junction Temperature +150 °C Maximum

* Maximum Power Dissipation Total Power Dissipation 1 W Total Power Dissipat.

HSB649A Datasheet (41.08 KB)

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HSB649A

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Hi-Sincerity Mocroelectronics

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41.08 KB

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Silicon pnp epitaxial planar transistor.
HI-SINCERITY MICROELECTRONICS CORP. HSB649A SILICON PNP EPITAXIAL PLANAR TRANSISTOR Spec. No. : HE6629 Issued Date : 1995.12.18 Revised Date : 2006.0.

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HSB649A SILICON PNP EPITAXIAL PLANAR TRANSISTOR Hi-Sincerity Mocroelectronics

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HSB649A General Description

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