HSB649A, HSB649A_Hi Datasheet - Hi-Sincerity Mocroelectronics

HSB649A - SILICON PNP EPITAXIAL PLANAR TRANSISTOR

Low frequency power amplifier complementary pair with HSD669A.

Absolute Maximum Ratings (TA=25°C) TO-126ML * Maximum Temperatures Storage Temperature -55 ~ +150 °C Junction Temperature +150 °C Maximum * Maximum Power Dissipation Total Power Dissipation 1 W Total Power Dissipat

HSB649A_Hi-SincerityMocroelectronics.pdf

HSB649A Datasheet Preview — This datasheet PDF includes multiple part numbers: HSB649A, HSB649A_Hi. Please refer to the document for exact specifications by model.

Datasheet Details

Part number:

HSB649A, HSB649A_Hi

Manufacturer:

Hi-Sincerity Mocroelectronics

File Size:

41.08 KB

Description:

Silicon pnp epitaxial planar transistor.

Note:

This datasheet PDF includes multiple part numbers: HSB649A, HSB649A_Hi.
Please refer to the document for exact specifications by model.

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HSB649T HSB-ARA62-SN15A HSB-ARA62-T115A HSB-ARA62-T215A HSB-ARA62-T315A HSB-ARD64-SN16C

📌 All Tags

HSB649A_Hi SILICON PNP EPITAXIAL PLANAR TRANSISTOR Hi-Sincerity Mocroelectronics