HSB649T, HSB649T-Hi - SILICON PNP EPITAXIAL PLANAR TRANSISTOR

Hi-Sincerity Mocroelectronics

HSB649T Datasheet Preview — This datasheet PDF includes multiple part numbers: HSB649T, HSB649T-Hi. Please refer to the document for exact specifications by model.

Datasheet Details

Part number	HSB649T, HSB649T-Hi
Manufacturer	Hi-Sincerity Mocroelectronics
File Size	39.99 KB
Description	SILICON PNP EPITAXIAL PLANAR TRANSISTOR
Datasheet	HSB649T-Hi-SincerityMocroelectronics.pdf
Note	This datasheet PDF includes multiple part numbers: HSB649T, HSB649T-Hi. Please refer to the document for exact specifications by model.

HSB649T Product details

Description

Low frequency power amplifier. Maximum Temperatures Storage Temperature -55 ~ +150 °C Junction Temperature +150 °C Maximum Maximum Power Dissipation Total Power Dissipation 1 W Total Power Dissipation (TC=25°C) 20 W Maximum Voltages and Currents BVCBO Collector to Base Voltage -180 V BVCEO Collector to Emitter Voltage -160 V BVEBO Emitter to Base Voltage -5 V IC Collector Current (DC) -1.5 A IC Collector Current (Pu

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Published: Mar 24, 2016 |