HSB649T

SILICON PNP EPITAXIAL PLANAR TRANSISTOR

Hi-Sincerity Mocroelectronics

HSB649T General Description

Low frequency power amplifier. Absolute Maximum Ratings (TA=25°C) TO-126

* Maximum Temperatures Storage Temperature -55 ~ +150 °C Junction Temperature +150 °C Maximum

* Maximum Power Dissipation Total Power Dissipation 1 W Total Power Dissipation (TC=25°C) 20 W

* Maxi.

HSB649T Datasheet (39.99 KB)

HSB649T Datasheet Preview — Preview of HSB649T PDF

Datasheet Details

Part number:

HSB649T

Manufacturer:

Hi-Sincerity Mocroelectronics

File Size:

39.99 KB

Description:

Silicon pnp epitaxial planar transistor.
HI-SINCERITY MICROELECTRONICS CORP. HSB649T SILICON PNP EPITAXIAL PLANAR TRANSISTOR Spec. No. : HT200103 Issued Date : 2001.12.01 Revised Date : 2005.

📁 Related Datasheet

HSB649A SILICON PNP EPITAXIAL PLANAR TRANSISTOR (Hi-Sincerity Mocroelectronics)

HSB-ARA62-SN15A (HSB Series) Connectors (DDK ELECTRONICS)

HSB-ARA62-T115A (HSB Series) Connectors (DDK ELECTRONICS)

HSB-ARA62-T215A (HSB Series) Connectors (DDK ELECTRONICS)

HSB-ARA62-T315A (HSB Series) Connectors (DDK ELECTRONICS)

HSB-ARD64-SN16C (HSB Series) Connectors (DDK ELECTRONICS)

HSB-HAA-xxx (HSB Series) Connectors (DDK ELECTRONICS)

HSB-HAC-xxx (HSB Series) Connectors (DDK ELECTRONICS)

HSB-HDC-xxx (HSB Series) Connectors (DDK ELECTRONICS)

HSB-R001BJ (HSB Series) Connectors (DDK ELECTRONICS)

TAGS

HSB649T SILICON PNP EPITAXIAL PLANAR TRANSISTOR Hi-Sincerity Mocroelectronics

Image Gallery

HSB649T General Description

Datasheet Details

File Size:

Description:

HSB649T Distributor