HSB649T - SILICON PNP EPITAXIAL PLANAR TRANSISTOR
Low frequency power amplifier.
Absolute Maximum Ratings (TA=25°C) TO-126 * Maximum Temperatures Storage Temperature -55 ~ +150 °C Junction Temperature +150 °C Maximum * Maximum Power Dissipation Total Power Dissipation 1 W Total Power Dissipation (TC=25°C) 20 W * Maxi