HSB649T, HSB649T-Hi Datasheet - Hi-Sincerity Mocroelectronics

HSB649T - SILICON PNP EPITAXIAL PLANAR TRANSISTOR

Low frequency power amplifier.

Absolute Maximum Ratings (TA=25°C) TO-126 * Maximum Temperatures Storage Temperature -55 ~ +150 °C Junction Temperature +150 °C Maximum * Maximum Power Dissipation Total Power Dissipation 1 W Total Power Dissipation (TC=25°C) 20 W * Maxi

HSB649T-Hi-SincerityMocroelectronics.pdf

HSB649T Datasheet Preview — This datasheet PDF includes multiple part numbers: HSB649T, HSB649T-Hi. Please refer to the document for exact specifications by model.

Datasheet Details

Part number:

HSB649T, HSB649T-Hi

Manufacturer:

Hi-Sincerity Mocroelectronics

File Size:

39.99 KB

Description:

Silicon pnp epitaxial planar transistor.

Note:

This datasheet PDF includes multiple part numbers: HSB649T, HSB649T-Hi.
Please refer to the document for exact specifications by model.

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📌 All Tags

HSB649T-Hi SILICON PNP EPITAXIAL PLANAR TRANSISTOR Hi-Sincerity Mocroelectronics