HSB1426 Datasheet - Hi-Sincerity Mocroelectronics

HSB1426 PNP EPITAXIAL PLANAR TRANSISTOR

HSB1426 Features

* Low Collector to Emitter Saturation Voltage TO-92 Absolute Maximum Ratings

* Maximum Temperatures Storage Temperature -55 ~ +150 °C Junction Temperature +150 °C Maximum

* Maximum Power Dissipation Total Power Dissipation (TA=25°C) 750 mW

* Maximum Voltages and

Datasheet Details

HSB1426

Hi-Sincerity Mocroelectronics

47.54 KB

Pnp epitaxial planar transistor.

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