* Low Collector to Emitter Saturation Voltage TO-92 Absolute Maximum Ratings
* Maximum Temperatures Storage Temperature -55 ~ +150 °C Junction Temperature +150 °C Maximum
* Maximum Power Dissipation Total Power Dissipation (TA=25°C) 750 mW
* Maximum Voltages and
HSB1426
Hi-Sincerity Mocroelectronics
47.54 KB
Pnp epitaxial planar transistor.
HI-SINCERITY MICROELECTRONICS CORP. HSB1426 PNP EPITAXIAL PLANAR TRANSISTOR Spec. No. : HE6506 Issued Date : 1994.03.25 Revised Date : 2004.11.30 Pag.
📁 Related Datasheet
HSB1109 PNP EPITAXIAL PLANAR TRANSISTOR (Hi-Sincerity Mocroelectronics)
HSB1109S PNP EPITAXIAL PLANAR TRANSISTOR (Hi-Sincerity Mocroelectronics)
HSB124 Silicon Epitaxial Planar Diode for High Speed Switching (Hitachi Semiconductor)
HSB124S Silicon Epitaxial Planar Diode for High Speed Switching (Hitachi Semiconductor)
HSB-ARA62-SN15A (HSB Series) Connectors (DDK ELECTRONICS)
HSB-ARA62-T115A (HSB Series) Connectors (DDK ELECTRONICS)
HSB-ARA62-T215A (HSB Series) Connectors (DDK ELECTRONICS)
HSB-ARA62-T315A (HSB Series) Connectors (DDK ELECTRONICS)
HSB-ARD64-SN16C (HSB Series) Connectors (DDK ELECTRONICS)
HSB-HAA-xxx (HSB Series) Connectors (DDK ELECTRONICS)
