HSB564A

PNP EPITAXIAL PLANAR TRANSISTOR

Hi-Sincerity Mocroelectronics

HSB564A General Description

The HSB564A is designed for general purpose low frequency power amplifier applications. Absolute Maximum Ratings TO-92

* Maximum Temperatures Storage Temperature -55 ~ +150 °C Junction Temperature +150 °C Maximum

* Maximum Power Dissipation Total Power Dissipation (TA=25°C) 8.

HSB564A Datasheet (46.12 KB)

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HSB564A

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Hi-Sincerity Mocroelectronics

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46.12 KB

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Pnp epitaxial planar transistor.
HI-SINCERITY MICROELECTRONICS CORP. HSB564A PNP EPITAXIAL PLANAR TRANSISTOR Spec. No. : HE6519 Issued Date : 1993.01.15 Revised Date : 2005.02.15 Pag.

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HSB564A PNP EPITAXIAL PLANAR TRANSISTOR Hi-Sincerity Mocroelectronics

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HSB564A General Description

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