B755 Datasheet | Specifications & PDF Download

2SB755 SILICON PNP TRIPLE DIFFUSED TYPE (PCT PROCESS) POWER AMPLIFIER APPLICATIONS. FEATURES • High Breakdown Voltage VCEO=-150V (Min.) High Transit

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SavantIC Semiconductor www.DataSheet4U.com Product Specification Silicon PNP Power Transistors 2SB755 · DESCRIPTION ·With MT-200 package ·Compleme

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isc Silicon PNP Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage- V(BR)CEO= -150V(Min) ·Good Linearity of hFE ·Complement to Type 2S

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SavantIC Semiconductor www.DataSheet4U.com Product Specification Silicon PNP Power Transistors 2SB755 · DESCRIPTION ·With MT-200 package ·Compleme

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Reflective Object Sensor OPB750N, OPB750T OPB755TZ, OPB755TAZ Obsolete (OPB755NZ) Features: • High contrast ratio (1,000 :1 minimum) • Low cost plasti

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Reflective Object Sensor OPB750N, OPB750T OPB755TZ, OPB755TAZ Obsolete (OPB755NZ) Features: • High contrast ratio (1,000 :1 minimum) • Low cost plasti

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Reflective Object Sensor OPB750N, OPB750T OPB755NZ, OPB755TZ, OPB755TAZ Features: • High contrast ratio (1,000 :1 minimum) • Low cost plastic housing

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Product Bulletin OPB755N JJuannuea1ry9290606 Reflective Object Sensor Type OPB755N Features • High contrast ratio 1000 to 1 minimum • 12.0 ± 0.5 mi

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Reflective Object Sensor OPB750N, OPB750T OPB755NZ, OPB755TZ, OPB755TAZ Features: • High contrast ratio (1,000 :1 minimum) • Low cost plastic housing

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Reflective Object Sensor OPB750N, OPB750T OPB755NZ, OPB755TZ, OPB755TAZ Features: • High contrast ratio (1,000 :1 minimum) • Low cost plastic housing

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Product Bulletin OPB755T June 1996 Reflective Object Sensor Type OPB755T Features • High contrast ratio, 1000 to 1 minimum • 12.0 ± 0.5 min. UL#142

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