2SB755 PNP Transistor

INCHANGE

Description

isc Silicon PNP Power Transistor .
Collector-Emitter Breakdown Voltage- V(BR)CEO= -150V(Min). Good Linearity of hFE. Complement to Type 2SD845. Minimum Lot-to-Lot varia.

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Datasheet Specifications

Part number: 2SB755
Manufacturer: INCHANGE
File Size: 216.95 KB
Datasheet: 2SB755-INCHANGE.pdf
Description: PNP Transistor

Applications

* Designed for power amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -150 V VCEO Collector-Emitter Voltage -150 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -12 A IB Base Current-Continuous

2SB755 Distributors

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2SB755 PNP Transistor INCHANGE

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