Datasheet4U Logo Datasheet4U.com

2SB755 PNP Transistor

2SB755 Description

isc Silicon PNP Power Transistor .
Collector-Emitter Breakdown Voltage- V(BR)CEO= -150V(Min). Good Linearity of hFE. Complement to Type 2SD845. Minimum Lot-to-Lot varia.

2SB755 Applications

* Designed for power amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -150 V VCEO Collector-Emitter Voltage -150 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -12 A IB Base Current-Continuous

📥 Download Datasheet

Preview of 2SB755 PDF
datasheet Preview Page 2

Datasheet Details

Part number
2SB755
Manufacturer
INCHANGE
File Size
216.95 KB
Datasheet
2SB755-INCHANGE.pdf
Description
PNP Transistor

📁 Related Datasheet

  • 2SB753 - SILICON PNP TRANSISTOR (Toshiba)
  • 2SB757 - SILICON POWER TRANSISTOR (SavantIC)
  • 2SB703 - SILICON POWER TRANSISTOR (SavantIC)
  • 2SB705A - Silicon PNP Power Transistors (SavantIC)
  • 2SB705B - Silicon PNP Power Transistors (SavantIC)
  • 2SB706 - PNP/NPN SILICON TRANSISTOR (ETC)
  • 2SB706A - PNP/NPN SILICON TRANSISTOR (ETC)
  • 2SB707 - (2SB707 / 2SB708) SILICON POWER TRANSISTOR (SavantIC)

📌 All Tags

PNP Transistor INCHANGE
INCHANGE 2SB755-like datasheet