Part number:
2SB754
Manufacturer:
INCHANGE
File Size:
195.59 KB
Description:
Pnp transistor.
2SB754
INCHANGE
195.59 KB
Pnp transistor.
📁 Related Datasheet
2SB753 - SILICON PNP TRANSISTOR
(Toshiba)
SILICON PNP TRIPLE DIFFUSED TYPE (PCT PROCESS)
o
2SB753
HIGH CURRENT SWITCHING APPLICATIONS. POWER AMPLIFIER APPLICATIONS.
FEATURES:
High Collector .
2SB753 - SILICON POWER TRANSISTOR
(SavantIC)
SavantIC Semiconductor
..
Product Specification
Silicon PNP Power Transistors
2SB753
DESCRIPTION ·With TO-220C package ·Complemen.
2SB753 - PNP Transistor
(INCHANGE)
isc Silicon PNP Power Transistor
2SB753
DESCRIPTION ·High Collector Current:IC= -7A ·Low Collector Saturation Voltage
: VCE(sat)= -0.5V(Max)@IC= -4A.
2SB754 - SILICON POWER TRANSISTOR
(SavantIC)
SavantIC Semiconductor
..
Product Specification
Silicon PNP Power Transistors
2SB754
DESCRIPTION ·With TO-3P(I) package ·Compleme.
2SB754 - Silicon PNP Transistor
(Toshiba)
SILICON PNP TRIPLE DIFFUSED TYPE (PCT PROCESS)
HIGH CURRENT SWITCHING APPLICATIONS. POWER AMPLIFIER APPLICATIONS. FEATURES
• High Collector Current :.
2SB755 - SILICON PNP TRANSISTOR
(Toshiba)
2SB755
SILICON PNP TRIPLE DIFFUSED TYPE (PCT PROCESS)
POWER AMPLIFIER APPLICATIONS.
FEATURES
• High Breakdown Voltage VCEO=-150V (Min.) High Transit.
2SB755 - SILICON POWER TRANSISTOR
(SavantIC)
SavantIC Semiconductor
..
Product Specification
Silicon PNP Power Transistors
2SB755
·
DESCRIPTION ·With MT-200 package ·Compleme.
2SB755 - PNP Transistor
(INCHANGE)
isc Silicon PNP Power Transistor
DESCRIPTION ·Collector-Emitter Breakdown Voltage-
V(BR)CEO= -150V(Min) ·Good Linearity of hFE ·Complement to Type 2S.
