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2SB755 Datasheet - Toshiba

2SB755 SILICON PNP TRANSISTOR

2SB755 Features

* High Breakdown Voltage VCEO=-150V (Min.) High Transition Frequency : f T=20MHz (Typ.) Complementary to 2SD845. Recommended for 80W High-Fidelity Audio Frequency Amplifier Output Stage. Unit in mm MAXIMUM RATINGS (Ta=25°c) CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Em

2SB755 Datasheet (97.66 KB)

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Datasheet Details

Part number:

2SB755

Manufacturer:

Toshiba ↗

File Size:

97.66 KB

Description:

Silicon pnp transistor.

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2SB755 SILICON PNP TRANSISTOR Toshiba

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