Datasheet Specifications
- Part number
- 2SB755
- Manufacturer
- Toshiba ↗
- File Size
- 97.66 KB
- Datasheet
- 2SB755-Toshiba.pdf
- Description
- SILICON PNP TRANSISTOR
Description
2SB755 SILICON PNP TRIPLE DIFFUSED TYPE (PCT PROCESS) POWER AMPLIFIER APPLICATIONS..
Features
* High Breakdown Voltage VCEO=-150V (Min. ) High Transition Frequency : f T=20MHz (Typ. ) Complementary to 2SD845. Recommended for 80W High-Fidelity Audio Frequency Amplifier Output Stage. Unit in mm MAXIMUM RATINGS (Ta=25°c) CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Em2SB755 Distributors
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