B815 Datasheet | Specifications & PDF Download

KCB815 is a GaAs pHEMT Non-Reflective high performance, low loss switch in a 7 lead Hermetic Surface-Mount Technology (SMT) package for Defense and Sa

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Bipolar Transistor (−)15 V, (−)0.7 A, Low VCE(sat), (PNP)NPN Single CP 2SB815, 2SD1048 Features • Ultrasmall Package Allows Miniaturization in End Pr

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Deep Gap Slotted Switch with Wire and Connector Options OPB815L, OPB815WZ Series Features: • Wide slot width: 0.375” (9.5 mm) • Deep slot depth: 0.430

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Ordering number : ENN694F 2SB815 / 2SD1048 PNP / NPN Epitaxial Planar Silicon Transistors 2SB815 / 2SD1048 General-Purpose AF Amplifier Applications

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Deep Gap Slotted Switch with Wire and Connector Options OPB815L, OPB815WZ Series Features: • Wide slot width: 0.375” (9.5 mm) • Deep slot depth: 0.430

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MMBTSB815 PNP Silicon Epitaxial Planar Transistor for general purpose AF amplifier www.DataSheet4U.com SOT-23 Plastic Package Absolute Maximum Rati

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4-PIN PHOTODARLINGTON OPTOCOUPLERS H11B815 DESCRIPTION The H11B815 consists of a gallium arsenide infrared emitting diode driving a silicon Darlington

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HIGH VOLTAGE SCHOTTKY RECTIFIER SDB8150PH Schottky Barrier Rectifier Features  Low forward voltage drop  Low power loss and High efficiency  L

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Ordering number : ENN694F 2SB815 / 2SD1048 PNP / NPN Epitaxial Planar Silicon Transistors 2SB815 / 2SD1048 General-Purpose AF Amplifier Applications

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4-PIN PHOTODARLINGTON OPTOCOUPLER H11B815 PACKAGE SCHEMATIC ANODE 1 4 COLLECTOR 4 4 CATHODE 2 3 EMITTER 1 1 4 1 DESCRIPTION The H11B815 consis

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SMD Type Transistors IC PNP Epitaxial Planar Silicon Transistors 2SB815 SOT-23 Unit: mm Features Ultrasmall package allows miniaturization in end pr

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UPM SB820D~SB8150D D2PAK SURFACE MOUNTSCHOTTKY BARRIER RECTIFIER Voltage Range 20 to 150 Volts Current 8 Amperes Features * Plastic package has Unde

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