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H11B815 - 4-PIN PHOTODARLINGTON OPTOCOUPLERS

Datasheet Summary

Description

The H11B815 consists of a gallium arsenide infrared emitting diode driving a silicon Darlington phototransistor in a 4-pin dual in-line package.

Features

  • Compact 4-pin package.
  • Current Transfer Ratio: 600% minimum (at IF = 1 mA).
  • High isolation voltage between input and output (5300 VRMS).
  • UL recognized (File # E90700) 4 1 4 1.

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Datasheet Details

Part number H11B815
Manufacturer QT Optoelectronics
File Size 53.98 KB
Description 4-PIN PHOTODARLINGTON OPTOCOUPLERS
Datasheet download datasheet H11B815 Datasheet
Additional preview pages of the H11B815 datasheet.

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Full PDF Text Transcription

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4-PIN PHOTODARLINGTON OPTOCOUPLERS H11B815 DESCRIPTION The H11B815 consists of a gallium arsenide infrared emitting diode driving a silicon Darlington phototransistor in a 4-pin dual in-line package.
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