B816 Datasheet | Specifications & PDF Download

Slotted Optical Switch OPB816Z Features:  0.20” (5.1 mm) wide gap, 0.61” (15.5 mm) deep slot  Wire length 24” (609 mm) minimum, 26 AWG  Dust protec

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216-Ball and 220-Ball, Dual-Channel LPDDR2 SDRAM Features LPDDR2 SDRAM EDB8164B4PR, EDB8164B4PK, EDB8164B4PT, EDBA164B2PR Features • Ultra-low-volta

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SavantIC Semiconductor www.DataSheet4U.com Product Specification Silicon PNP Power Transistors 2SB816 DESCRIPTION ·With TO-3PN package ·Complement

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isc Silicon PNP Power Transistor 2SB816 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -120V(Min) ·Good Linearity of hFE ·Wide Area o

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Ordering number:677D PNP/NPN Epitaxial Planar Silicon Transistors 2SB816/2SD1046 For LF Power Amplifier, 50W Output Large Power Switching Application

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DATA SHEET 8G bits DDR2 Mobile RAM™ PoP (12mm × 12mm, 216-ball FBGA) EDB8164B3PF Specifications • Density: 8G bits • Organization — 2 pieces of 4Gb

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Ordering number:677D PNP/NPN Epitaxial Planar Silicon Transistors 2SB816/2SD1046 For LF Power Amplifier, 50W Output Large Power Switching Application

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216-Ball and 220-Ball, Dual-Channel LPDDR2 SDRAM Features LPDDR2 SDRAM EDB8164B4PR, EDB8164B4PK, EDB8164B4PT, EDBA164B2PR Features • Ultra-low-volta

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FDB8160_F085 N-Channel PowerTrench® MOSFET FDB8160_F085 N-Channel PowerTrench® MOSFET 30V, 80A, 1.8mΩ October 2010 Features „ Typ rDS(on) = 1.5mΩ a

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www.DataSheet4U.com PD - 91795A RADIATION HARDENED POWER MOSFET SURFACE MOUNT (SMD-3) Product Summary Part Number IRHNB7160 IRHNB3160 IRHNB4160 IRHN

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216-Ball and 220-Ball, Dual-Channel LPDDR2 SDRAM Features LPDDR2 SDRAM EDB8164B4PR, EDB8164B4PK, EDB8164B4PT, EDBA164B2PR Features • Ultra-low-volta

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