BC338 Datasheet | Specifications & PDF Download

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors BC337,-16,-25,-40 TRANSISTOR (NPN) BC338, -16,-25,-40 TO-9

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JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors BC337,-16,-25,-40 TRANSISTOR (NPN) BC338, -16,-25,-40 TO-9

(64 views)

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors BC337,-16,-25,-40 TRANSISTOR (NPN) BC338, -16,-25,-40 TO-9

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JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors BC337,-16,-25,-40 TRANSISTOR (NPN) BC338, -16,-25,-40 TO-9

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JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors BC337,-16,-25,-40 TRANSISTOR (NPN) BC338, -16,-25,-40 TO-9

(54 views)

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors BC337,-16,-25,-40 TRANSISTOR (NPN) BC338, -16,-25,-40 TO-9

(54 views)

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors BC337,-16,-25,-40 TRANSISTOR (NPN) BC338, -16,-25,-40 TO-9

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BC337 / BC338 — NPN Epitaxial Silicon Transistor September 2015 BC337 / BC338 NPN Epitaxial Silicon Transistor Features • Switching and Amplifier A

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BC337 / BC338 — NPN Epitaxial Silicon Transistor September 2015 BC337 / BC338 NPN Epitaxial Silicon Transistor Features • Switching and Amplifier A

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UNISONIC TECHNOLOGIES CO., LTD BC337/BC338 NPN SILICON TRANSISTOR SWITCHING AND AMPLIFIER APPLICATIONS  FEATURES * Suitable for AF-Driver stages

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NPN Silicon AF Transistors q High current gain q High collector current q Low collector-emitter saturation voltage q Complementary types: BC 327, BC 3

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NPN Silicon AF Transistors q High current gain q High collector current q Low collector-emitter saturation voltage q Complementary types: BC 327, BC 3

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NPN Silicon AF Transistors q High current gain q High collector current q Low collector-emitter saturation voltage q Complementary types: BC 327, BC 3

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BC337, BC338 Small Signal Transistors (NPN) TO-92 .181 (4.6) .142 (3.6) min..492 (12.5) .181 (4.6) max.∅ .022 (0.55) .098 (2.5) CE B Dimensions in

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NPN Silicon AF Transistors q High current gain q High collector current q Low collector-emitter saturation voltage q Complementary types: BC 327, BC 3

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NPN Silicon AF Transistors q High current gain q High collector current q Low collector-emitter saturation voltage q Complementary types: BC 327, BC 3

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SEMICONDUCTOR TECHNICAL DATA GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. FEATURES High Current : IC=800mA. DC Current Gain : hFE=100 630 (VCE=

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BC337, BC337−16, BC337−25, BC337−40, BC338−25 Amplifier Transistors NPN Silicon http://onsemi.com Features COLLECTOR 1 2 BASE Symbol VCEO VCBO VEBO IC

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MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by BC337/D Amplifier Transistors NPN Silicon COLLECTOR 1 BC337,-16,-25,-40 BC338,-16,-25

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BC337…BC338 NPN Silicon Epitaxial Planar Transistor for switching and amplifier applications These types are subdivided into three groups -16, -25 and

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