BC848 Datasheet | Specifications & PDF Download

BC846 BC850 BC846 BC850 SMD General Purpose NPN Transistors SMD Universal-NPN-Transistoren IC = 100 mA hFE = 180/290/520 Tjmax = 150°C VCEO

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BC846 BC850 BC846 BC850 SMD General Purpose NPN Transistors SMD Universal-NPN-Transistoren IC = 100 mA hFE = 180/290/520 Tjmax = 150°C VCEO

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BC846 BC850 BC846 BC850 SMD General Purpose NPN Transistors SMD Universal-NPN-Transistoren IC = 100 mA hFE = 180/290/520 Tjmax = 150°C VCEO

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UNISONIC TECHNOLOGIES CO., LTD BC846-BC850 NPN SILICON TRANSISTOR SWITCHING AND AMPLIFIER APPLICATION  FEATURES * Suitable for automatic insertio

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Features • Ideally Suited for Automatic Insertion • Complementary PNP Types: BC856–BC858 • For Switching and AF Amplifier Applications • Totally Lead-

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Features • Ideally Suited for Automatic Insertion • Complementary PNP Types: BC856–BC858 • For Switching and AF Amplifier Applications • Totally Lead-

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Dual General Purpose Transistors NPN Duals These transistors are designed for general purpose amplifier applications. They are housed in the SOT–363/

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www.DataSheet4U.com ISSUED DATE :2005/06/08 REVISED DATE : GSBC848 Description Package Dimensions NPN EPITAXIAL PLANAR TRANSISTOR The GSBC848 is de

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Small Signal Transistor BC846A-G Thru. BC848C-G (NPN) RoHS Device Features -Power dissipation O PCM: 0.20W (@TA=25 C) -Collector current ICM: 0.1A -C

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Small Signal Transistor BC846A-G Thru. BC848C-G (NPN) RoHS Device Features -Power dissipation O PCM: 0.20W (@TA=25 C) -Collector current ICM: 0.1A -C

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Production specification NPN general purpose Transistor FEATURES  High current gain.  Excellent hFE linearity . Pb Lead-free  Low noise between

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Features • Ideally Suited for Automatic Insertion • Complementary PNP Types: BC856–BC858 • For Switching and AF Amplifier Applications • Totally Lead-

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Dual General Purpose Transistors NPN Duals These transistors are designed for general purpose amplifier applications. They are housed in the SOT–363/

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Production specification NPN general purpose Transistor FEATURES  High current gain.  Excellent hFE linearity . Pb Lead-free  Low noise between

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MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by BC846AWT1/D General Purpose Transistors NPN Silicon These transistors are designed fo

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MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by BC846AWT1/D General Purpose Transistors NPN Silicon These transistors are designed fo

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NPN Silicon AF Transistors • For AF input stages and driver applications • High current gain • Low collector-emitter saturation voltage • Low noise be

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MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by BC846AWT1/D General Purpose Transistors NPN Silicon These transistors are designed fo

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BC846S BC848S NPN General Purpose Transistors NPN Surface mount Si-Epitaxial PlanarTransistors Si-Epitaxial PlanarTransistoren für die Oberfläch

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