BCP53-16 Datasheet | Specifications & PDF Download

® BCP53-16 LOW POWER PNP TRANSISTOR Ordering Code BCP53-16 Marking BCP5316 s SILICON EPITAXIAL PLANAR PNP MEDIUM VOLTAGE TRANSISTOR s SOT-223 PLAS

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Features  BVCEO > -45V, -60V & -80V  IC = -1A High Continuous Collector Current  ICM = -2A Peak Pulse Current  2W Power Dissipation  Low Saturati

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DATA SHEET www.onsemi.com PNP Silicon Epitaxial Transistors BCP53 Series This PNP Silicon Epitaxial transistor is designed for use in audio amplifi

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DATA SHEET www.onsemi.com PNP Silicon Epitaxial Transistors BCP53 Series This PNP Silicon Epitaxial transistor is designed for use in audio amplifi

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Description This Bipolar Junction Transistor (BJT) has been designed to meet the stringent requirements of Automotive Applications. Features • BVCEO >

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Features  BVCEO > -45V, -60V & -80V  IC = -1A High Continuous Collector Current  ICM = -2A Peak Pulse Current  2W Power Dissipation  Low Saturati

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DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D087 BCP51; BCP52; BCP53 PNP medium power transistors Product specification Supersedes data of 1

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Features  BVCEO > -45V, -60V & -80V  IC = -1A High Continuous Collector Current  ICM = -2A Peak Pulse Current  2W Power Dissipation  Low Saturati

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PNP Silicon AF Transistors • For AF driver and output stages • High collector current • Low collector-emitter saturation voltage • Complementary types

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BCP53T series 80 V, 1 A PNP medium power transistors Rev. 2 — 29 April 2019 Product data sheet 1. Product profile 1.1. General description PNP medi

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Description This Bipolar Junction Transistor (BJT) has been designed to meet the stringent requirements of Automotive Applications. Features • BVCEO >

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SC-73 BCP53H series 80 V, 1 A PNP medium power transistors Rev. 1 — 21 July 2017 Product data sheet 1. Product profile 1.1 General description PNP

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