BD250 Datasheet | Specifications & PDF Download

SavantIC Semiconductor Product Specification Silicon PNP Power Transistors BD250/A/B/C www.datasheet4u.com DESCRIPTION ·With TO-3PN package ·Comp

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& UNIVERW. llllCROELECTRONICS CO., LTD. ACTIVE DELAY LINES AD1480 SERIES: 14-PIN DIL 10-TAP EQUALLY-SPACED FEATURES: •Compatible with TTL Circuits e

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BD250, BD250A, BD250B, BD250C PNP SILICON POWER TRANSISTORS Copyright © 1997, Power Innovations Limited, UK JUNE 1973 - REVISED MARCH 1997 q Designe

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® WON-TOP ELECTRONICS Features  Diffused Junction  Low Leakage  Low Cost  High Surge Current Capability  Typical IR less than 5.0µA Mechanical

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® WON-TOP ELECTRONICS Features  Diffused Junction  Low Leakage  Low Cost  High Surge Current Capability  Typical IR less than 5.0µA Mechanical

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® WON-TOP ELECTRONICS Features  Diffused Junction  Low Leakage  Low Cost  High Surge Current Capability  Typical IR less than 5.0µA Mechanical

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® WON-TOP ELECTRONICS Features  Diffused Junction  Low Leakage  Low Cost  High Surge Current Capability  Typical IR less than 5.0µA Mechanical

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® WON-TOP ELECTRONICS Features  Diffused Junction  Low Leakage  Low Cost  High Surge Current Capability  Typical IR less than 5.0µA Mechanical

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® WON-TOP ELECTRONICS Features  Diffused Junction  Low Leakage  Low Cost  High Surge Current Capability  Typical IR less than 5.0µA Mechanical

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® WON-TOP ELECTRONICS Features  Diffused Junction  Low Leakage  Low Cost  High Surge Current Capability  Typical IR less than 5.0µA Mechanical

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BD250, BD250A, BD250B, BD250C PNP SILICON POWER TRANSISTORS Copyright © 1997, Power Innovations Limited, UK JUNE 1973 - REVISED MARCH 1997 q Designe

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BD250, BD250A, BD250B, BD250C PNP SILICON POWER TRANSISTORS Copyright © 1997, Power Innovations Limited, UK JUNE 1973 - REVISED MARCH 1997 q Designe

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BD250, BD250A, BD250B, BD250C PNP SILICON POWER TRANSISTORS Copyright © 1997, Power Innovations Limited, UK JUNE 1973 - REVISED MARCH 1997 q Designe

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SavantIC Semiconductor Product Specification Silicon PNP Power Transistors BD250/A/B/C www.datasheet4u.com DESCRIPTION ·With TO-3PN package ·Comp

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SavantIC Semiconductor Product Specification Silicon PNP Power Transistors BD250/A/B/C www.datasheet4u.com DESCRIPTION ·With TO-3PN package ·Comp

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SavantIC Semiconductor Product Specification Silicon PNP Power Transistors BD250/A/B/C www.datasheet4u.com DESCRIPTION ·With TO-3PN package ·Comp

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Ordering number : ENA1204A DBD250G 25.0A Single-Phase Bridge Rectifier http://onsemi.com Features • Plastic molded structure • Glass passiva

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isc Silicon PNP Power Transistor DESCRIPTION ·Collector Current -IC= -25A ·Collector-Emitter Breakdown Voltage- : V(BR)CEO = -45V(Min)- BD250; -60V(M

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isc Silicon PNP Power Transistor DESCRIPTION ·Collector Current -IC= -25A ·Collector-Emitter Breakdown Voltage- : V(BR)CEO = -45V(Min)- BD250; -60V(M

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isc Silicon PNP Power Transistor DESCRIPTION ·Collector Current -IC= -25A ·Collector-Emitter Breakdown Voltage- : V(BR)CEO = -45V(Min)- BD250; -60V(M

(1 views)