BD330 Datasheet | Specifications & PDF Download

isc Silicon PNP Power Transistor BD330 DESCRIPTION ·DC Current Gain- : hFE= 85~375(Min)@ IC= -0.5A ·Collector-Emitter Sustaining Voltage - : VCEO(SU

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NC7WBD3306 TinyLogic UHS 2-Bit Low Power Bus Switch with Level Shifting May 2000 Revised April 2003 NC7WBD3306 TinyLogic UHS 2-Bit Low Power Bus S

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Philips Semiconductors Small-signal Transistors LEADED DEVICES (continued) PNP GENERAL PURPOSE POWER TRANSISTORS TYPE NUMBER BD132 BD136 BD136-10 BD1

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Product Search Data Sheet PTGL07BD330N3B51B0 Note: This datasheet may be out of date. Please download the latest datasheet of PTGL07BD330N3B51B0 from

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MMBD330T1G, SMMBD330T1G, MMBD770T1G, SMMBD770T1G Schottky Barrier Diodes Schottky barrier diodes are designed primarily for high−efficiency UHF and

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® WON-TOP ELECTRONICS MMBD330 SURFACE MOUNT SCHOTTKY BARRIER DIODE Pb Features  Very Low Capacitance  Low Reverse Leakage  PN Junction Guard Ring

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MMBD330T1G, SMMBD330T1G, MMBD770T1G, SMMBD770T1G Schottky Barrier Diodes Schottky barrier diodes are designed primarily for high−efficiency UHF and

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MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document BY MMBD110T1/D Schottky Barrier Diodes Schottky barrier diodes are designed primarily for

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2-Bit Translating Bus Switch 7WBD3305 The 7WBD3305 is an advanced high−speed low−power 2−bit translating bus switch in ultra−small footprints. Feature

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2-Bit Translating Bus Switch 7WBD3306 The 7WBD3306 is an advanced high−speed low−power 2−bit translating bus switch in ultra−small footprints. Feature

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MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MBD110DWT1/D Dual Schottky Barrier Diodes Application circuit designs are moving towar

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ON Semiconductort Dual Schottky Barrier Diodes Application circuit designs are moving toward the consolidation of device count and into smaller packa

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Dual Schottky Barrier Diodes MBD110DWT1G, MBD330DWT1G Application circuit designs are moving toward the consolidation of device count and into smalle

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