BD501 Datasheet | Specifications & PDF Download

BD501 Silicon NPN Power Transistors

isc Silicon NPN Power Transistors BD501/B DESCRI.

isc Silicon NPN Power Transistors BD501/B DESCRIPTION ·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 50V(Min) 80V(Min) ·High Power Dissipation

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MMBD501 SOT-23 (TO-236AA/AB) HOT-CARRIER DIODE MAXIMUM RATINGS Rating Reverse Voltage Symbol VR THERMAL CHARACTERISTICS Characteristic *Total Dev

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isc Silicon NPN Power Transistors BD501/B DESCRIPTION ·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 50V(Min) 80V(Min) ·High Power Dissipation

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