BD501 Silicon NPN Power Transistors

INCHANGE

Description

isc Silicon NPN Power Transistors BD501/B .
Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 50V(Min) 80V(Min). High Power Dissipation. Minimum Lot-to-Lot variations for robust de.

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Datasheet Specifications

Part number: BD501
Manufacturer: INCHANGE
File Size: 191.44 KB
Datasheet: BD501-INCHANGE.pdf
Description: Silicon NPN Power Transistors

Applications

* Designed for use in high power audio amplifiers utilizing complementary or quasi complementary circuits. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT BD501 55 VCBO Collector-Base Voltage V BD501B 85 BD501 50 VCEO Collector-Emitter Voltage V BD501B 80 VEBO Em

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BD501 Silicon NPN Power Transistors INCHANGE

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