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BD501 Silicon NPN Power Transistors

BD501 Description

isc Silicon NPN Power Transistors BD501/B .
Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 50V(Min) 80V(Min). High Power Dissipation. Minimum Lot-to-Lot variations for robust de.

BD501 Applications

* Designed for use in high power audio amplifiers utilizing complementary or quasi complementary circuits. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT BD501 55 VCBO Collector-Base Voltage V BD501B 85 BD501 50 VCEO Collector-Emitter Voltage V BD501B 80 VEBO Em

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Datasheet Details

Part number
BD501
Manufacturer
INCHANGE
File Size
191.44 KB
Datasheet
BD501-INCHANGE.pdf
Description
Silicon NPN Power Transistors

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Silicon NPN Power Transistors INCHANGE
INCHANGE BD501-like datasheet