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BD501B, BD501 Silicon NPN Power Transistors

BD501B Description

isc Silicon NPN Power Transistors BD501/B .
Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 50V(Min) 80V(Min). High Power Dissipation. Minimum Lot-to-Lot variations for robust de.

BD501B Applications

* Designed for use in high power audio amplifiers utilizing complementary or quasi complementary circuits. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT BD501 55 VCBO Collector-Base Voltage V BD501B 85 BD501 50 VCEO Collector-Emitter Voltage V BD501B 80 VEBO Em

📥 Download Datasheet

This datasheet PDF includes multiple part numbers: BD501B, BD501. Please refer to the document for exact specifications by model.
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Datasheet Details

Part number
BD501B, BD501
Manufacturer
INCHANGE
File Size
191.44 KB
Datasheet
BD501-INCHANGE.pdf
Description
Silicon NPN Power Transistors
Note
This datasheet PDF includes multiple part numbers: BD501B, BD501.
Please refer to the document for exact specifications by model.

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Silicon NPN Power Transistors INCHANGE
INCHANGE BD501B-like datasheet