BD540, BD540A, BD540B, BD540C PNP SILICON POWER TR.
Pan Jit International
BD540YS - SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS
BD540YS~BD5200YS SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS VOLTAGE 40 to 200 Volts CURRENT 5 Amperes FEATURES • Plastic package has Underwriters Labor.
Pan Jit International
BD540S - SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS
BD540S~BD5200S SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS VOLTAGE 40 to 200 Volts CURRENT 5 Amperes FEATURES • Plastic package has Underwriters Laborat.
Pan Jit International
BD540T - SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS
PRELIMINARY BD540T~BD5200T SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS VOLTAGE 40 to 200 Volts CURRENT 5 Amperes FEATURES • Plastic package has Underwr.
Pan Jit International
BD540YT - SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS
PRELIMINARY BD540YT~BD5200YT SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS VOLTAGE 40 to 200 Volts CURRENT 5 Amperes FEATURES • Plastic package has Under.
Power Innovations Limited
BD540 - PNP SILICON POWER TRANSISTORS
BD540, BD540A, BD540B, BD540C PNP SILICON POWER TRANSISTORS Copyright © 1997, Power Innovations Limited, UK JUNE 1973 - REVISED MARCH 1997 q Designe.
Power Innovations Limited
BD540A - PNP SILICON POWER TRANSISTORS
BD540, BD540A, BD540B, BD540C PNP SILICON POWER TRANSISTORS Copyright © 1997, Power Innovations Limited, UK JUNE 1973 - REVISED MARCH 1997 q Designe.
Power Innovations Limited
BD540B - PNP SILICON POWER TRANSISTORS
BD540, BD540A, BD540B, BD540C PNP SILICON POWER TRANSISTORS Copyright © 1997, Power Innovations Limited, UK JUNE 1973 - REVISED MARCH 1997 q Designe.
Power Innovations Limited
BD540C - PNP SILICON POWER TRANSISTORS
BD540, BD540A, BD540B, BD540C PNP SILICON POWER TRANSISTORS Copyright © 1997, Power Innovations Limited, UK JUNE 1973 - REVISED MARCH 1997 q Designe.
INCHANGE
BD540C - PNP Transistor
isc Silicon PNP Power Transistor BD540C DESCRIPTION ·DC Current Gain - : hFE = 40(Min.)@ IC= -0.5A ·Collector-Emitter Breakdown Voltage- : V(BR)CEO=.
INCHANGE
BD540B - PNP Transistor
isc Silicon PNP Power Transistor BD540B DESCRIPTION ·DC Current Gain - : hFE = 40(Min.)@ IC= -0.5A ·Collector-Emitter Breakdown Voltage- : V(BR)CEO=.
INCHANGE
BD540 - PNP Transistor
isc Silicon PNP Power Transistor BD540 DESCRIPTION ·DC Current Gain - : hFE = 40(Min.)@ IC= -0.5A ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= .
INCHANGE
BD540A - PNP Transistor
isc Silicon PNP Power Transistor BD540A DESCRIPTION ·DC Current Gain - : hFE = 40(Min.)@ IC= -0.5A ·Collector-Emitter Breakdown Voltage- : V(BR)CEO=.
