BD650 Datasheet | Specifications & PDF Download

isc Silicon PNP Darlington Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -100V(Min) ·High DC Current Gain : hFE= 750

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SavantIC Semiconductor Product Specification Silicon PNP Power Transistors DESCRIPTION ·With TO-220C package www.datasheet4u.com ·Complement to type

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www.DataSheet.co.kr BD640CT~BD6200CT SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS VOLTAGE FEATURES • Plastic package has Underwriters Laboratory Flammab

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MBRD620CT, NRVBD620VCT, SBRV620CT Series Switch-mode Power Rectifiers DPAK−3 Surface Mount Package These state−of−the−art devices are designed for us

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isc Silicon PNP Darlington Power Transistor INCHANGE Semiconductor BD650F DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -100V(Min) ·

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www.DataSheet4U.com BD646, BD648, BD650, BD652 PNP SILICON POWER DARLINGTONS ● ● ● ● Designed for Complementary Use with BD645, BD647, BD649 and BD

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SEMICONDUCTORS BD644 – 646 – 648 – 650 – 652 SILICON DARLINGTON POWER TRANSISTORS PNP epitaxial-base transistors in a monolithic Dalrington circuit

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www.DataSheet.co.kr BD640CS~BD6200CS SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS VOLTAGE FEATURES • Plastic package has Underwriters Laboratory Flammab

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