BD651 Datasheet | Specifications & PDF Download

SavantIC Semiconductor Product Specification Silicon NPN Power Transistors DESCRIPTION ·With TO-220C package www.datasheet4u.com ·Complement to type

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isc Silicon NPN Darlington Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 120V(Min) ·High DC Current Gain : hFE= 750(

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SEMICONDUCTORS BD643 – 645 – 647 – 649 – 651 SILICON DARLINGTON POWER TRANSISTORS NPN epitaxial-base transistors in a monolithic Dalrington circuit a

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www.DataSheet4U.com BD645, BD647, BD649, BD651 NPN SILICON POWER DARLINGTONS ● ● ● ● Designed for Complementary Use with BD646, BD648, BD650 and BD

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isc Silicon NPN Darlington Power Transistor INCHANGE Semiconductor BD651F DESCRIPTION ·High DC Current Gain ·Low Saturation Voltage ·Complement to T

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