www.DataSheet4U.com BD645, BD647, BD649, BD651 NP.
BD651 - SILICON POWER TRANSISTOR
SavantIC Semiconductor Product Specification Silicon NPN Power Transistors DESCRIPTION ·With TO-220C package www.datasheet4u.com ·Complement to type.BD651F - NPN Transistor
isc Silicon NPN Darlington Power Transistor INCHANGE Semiconductor BD651F DESCRIPTION ·High DC Current Gain ·Low Saturation Voltage ·Complement to T.BD651 - NPN SILICON POWER DARLINGTONS
www.DataSheet4U.com BD645, BD647, BD649, BD651 NPN SILICON POWER DARLINGTONS ● ● ● ● Designed for Complementary Use with BD646, BD648, BD650 and BD.BD6510F - High-Side Switch
www.DataSheet4U.com Appendix Notes No technical content pages of this document may be reproduced in any form or transmitted by any means without pri.BD6512F - High-Side Switch
www.DataSheet4U.com Appendix Notes No technical content pages of this document may be reproduced in any form or transmitted by any means without pri.BD6513F - High-Side Switch
www.DataSheet4U.com Appendix Notes No technical content pages of this document may be reproduced in any form or transmitted by any means without pri.BD6516F - High-Side Switch
www.DataSheet4U.com Appendix Notes No technical content pages of this document may be reproduced in any form or transmitted by any means without pri.BD6517F - High-Side Switch
www.DataSheet4U.com Appendix Notes No technical content pages of this document may be reproduced in any form or transmitted by any means without pri.BD6519FJ - High-Side Switch
www.DataSheet4U.com Appendix Notes No technical content pages of this document may be reproduced in any form or transmitted by any means without pri.BD651 - SILICON DARLINGTON POWER TRANSISTORS
SEMICONDUCTORS BD643 – 645 – 647 – 649 – 651 SILICON DARLINGTON POWER TRANSISTORS NPN epitaxial-base transistors in a monolithic Dalrington circuit a.BD651 - NPN Transistor
isc Silicon NPN Darlington Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 120V(Min) ·High DC Current Gain : hFE= 750(.