Rohm
BD6510F - High-Side Switch
www.DataSheet4U.com
Appendix
Notes
No technical content pages of this document may be reproduced in any form or transmitted by any means without pri
(18 views)
SavantIC
BD651 - SILICON POWER TRANSISTOR
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
DESCRIPTION ·With TO-220C package www.datasheet4u.com ·Complement to type
(15 views)
Bourns Electronic Solutions
BD651 - NPN SILICON POWER DARLINGTONS
www.DataSheet4U.com
BD645, BD647, BD649, BD651 NPN SILICON POWER DARLINGTONS
● ● ● ●
Designed for Complementary Use with BD646, BD648, BD650 and BD
(13 views)
Rohm
BD6517F - High-Side Switch
www.DataSheet4U.com
Appendix
Notes
No technical content pages of this document may be reproduced in any form or transmitted by any means without pri
(13 views)
Rohm
BD6512F - High-Side Switch
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Appendix
Notes
No technical content pages of this document may be reproduced in any form or transmitted by any means without pri
(11 views)
Rohm
BD6513F - High-Side Switch
www.DataSheet4U.com
Appendix
Notes
No technical content pages of this document may be reproduced in any form or transmitted by any means without pri
(11 views)
Rohm
BD6519FJ - High-Side Switch
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Appendix
Notes
No technical content pages of this document may be reproduced in any form or transmitted by any means without pri
(11 views)
Comset Semiconductors
BD651 - SILICON DARLINGTON POWER TRANSISTORS
SEMICONDUCTORS
BD643 – 645 – 647 – 649 – 651 SILICON DARLINGTON POWER TRANSISTORS
NPN epitaxial-base transistors in a monolithic Dalrington circuit a
(11 views)
INCHANGE
BD651F - NPN Transistor
isc Silicon NPN Darlington Power Transistor
INCHANGE Semiconductor
BD651F
DESCRIPTION ·High DC Current Gain ·Low Saturation Voltage ·Complement to T
(11 views)
INCHANGE
BD651 - NPN Transistor
isc Silicon NPN Darlington Power Transistor
DESCRIPTION ·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 120V(Min) ·High DC Current Gain
: hFE= 750(
(11 views)
Rohm
BD6516F - High-Side Switch
www.DataSheet4U.com
Appendix
Notes
No technical content pages of this document may be reproduced in any form or transmitted by any means without pri
(9 views)