BD899 (INCHANGE)
NPN Transistor
isc Silicon NPN Darlington Power Transistor
BD899
DESCRIPTION ·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 80V(Min) ·High DC Current Gain
: hFE
(30 views)
BD899A (Bourns)
NPN SILICON POWER DARLINGTONS
BD895A, BD897A, BD899A NPN SILICON POWER DARLINGTONS
● Designed for Complementary Use with BD896A, BD898A and BD900A
● 70 W at 25°C Case Temperature
(27 views)
BD899 (SavantIC)
SILICON POWER TRANSISTOR
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
DESCRIPTION ·With TO-220C package www.datasheet4u.com ·Complement to type
(26 views)
BD899A (Power Innovations Limited)
NPN Transistor
BD895A, BD897A, BD899A NPN SILICON POWER DARLINGTONS
Copyright © 1997, Power Innovations Limited, UK AUGUST 1993 - REVISED MARCH 1997
q
Designed for
(25 views)
BD899A (INCHANGE)
NPN Transistor
isc Silicon NPN Darlington Power Transistor
BD899A
DESCRIPTION ·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 80V(Min) ·High DC Current Gain
: hF
(25 views)
BD899 (Power Innovations Limited)
NPN Transistor
BD895, BD897, BD899, BD901 NPN SILICON POWER DARLINGTONS
Copyright © 1997, Power Innovations Limited, UK AUGUST 1993 - REVISED MARCH 1997
q
Designed
(24 views)
BD899A (SavantIC)
SILICON POWER TRANSISTOR
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
DESCRIPTION ·With TO-220C package www.datasheet4u.com ·Complement to type
(22 views)
